Fabrication of spin-current-induced domain-wall-nucleation device in planar configuration

Takashi Kimura; Fujio Wakaya; Kenji Gamo

doi:10.1116/1.1518014

Fabrication of spin-current-induced domain-wall-nucleation device in planar configuration

Takashi Kimura, Fujio Wakaya, Kenji Gamo

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A method for investigating the spin-transfer effect using planar configuration in ferromagnet/nonmagnet/ferromagnet structure was developed. An attempt was made to observe the changes of the switching field in the magnetic wire due to the spin injection. In one device using FIB in situ process, the clear change was not observed. Clear changes of the switching field were observed and were quantitatively consistent with the theoretical analysis based on the spin-transfer effect. It was found that the interface fabricated by the multi-angle deposition is effective to prevent the spin-flip scattering.

Original language	English
Pages (from-to)	2814-2818
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	6
DOIs	https://doi.org/10.1116/1.1518014
Publication status	Published - Nov 2002
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "A method for investigating the spin-transfer effect using planar configuration in ferromagnet/nonmagnet/ferromagnet structure was developed. An attempt was made to observe the changes of the switching field in the magnetic wire due to the spin injection. In one device using FIB in situ process, the clear change was not observed. Clear changes of the switching field were observed and were quantitatively consistent with the theoretical analysis based on the spin-transfer effect. It was found that the interface fabricated by the multi-angle deposition is effective to prevent the spin-flip scattering.",

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AU - Wakaya, Fujio

AU - Gamo, Kenji

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N2 - A method for investigating the spin-transfer effect using planar configuration in ferromagnet/nonmagnet/ferromagnet structure was developed. An attempt was made to observe the changes of the switching field in the magnetic wire due to the spin injection. In one device using FIB in situ process, the clear change was not observed. Clear changes of the switching field were observed and were quantitatively consistent with the theoretical analysis based on the spin-transfer effect. It was found that the interface fabricated by the multi-angle deposition is effective to prevent the spin-flip scattering.

AB - A method for investigating the spin-transfer effect using planar configuration in ferromagnet/nonmagnet/ferromagnet structure was developed. An attempt was made to observe the changes of the switching field in the magnetic wire due to the spin injection. In one device using FIB in situ process, the clear change was not observed. Clear changes of the switching field were observed and were quantitatively consistent with the theoretical analysis based on the spin-transfer effect. It was found that the interface fabricated by the multi-angle deposition is effective to prevent the spin-flip scattering.

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SN - 1071-1023

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ER -

Fabrication of spin-current-induced domain-wall-nucleation device in planar configuration

Abstract

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