Abstract
A method for investigating the spin-transfer effect using planar configuration in ferromagnet/nonmagnet/ferromagnet structure was developed. An attempt was made to observe the changes of the switching field in the magnetic wire due to the spin injection. In one device using FIB in situ process, the clear change was not observed. Clear changes of the switching field were observed and were quantitatively consistent with the theoretical analysis based on the spin-transfer effect. It was found that the interface fabricated by the multi-angle deposition is effective to prevent the spin-flip scattering.
| Original language | English |
|---|---|
| Pages (from-to) | 2814-2818 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 20 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Nov 2002 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Kimura, T., Wakaya, F., & Gamo, K. (2002). Fabrication of spin-current-induced domain-wall-nucleation device in planar configuration. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(6), 2814-2818. https://doi.org/10.1116/1.1518014