Abstract
A method for investigating the spin-transfer effect using planar configuration in ferromagnet/nonmagnet/ferromagnet structure was developed. An attempt was made to observe the changes of the switching field in the magnetic wire due to the spin injection. In one device using FIB in situ process, the clear change was not observed. Clear changes of the switching field were observed and were quantitatively consistent with the theoretical analysis based on the spin-transfer effect. It was found that the interface fabricated by the multi-angle deposition is effective to prevent the spin-flip scattering.
| Original language | English |
|---|---|
| Pages (from-to) | 2814-2818 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 20 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Nov 1 2002 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Fabrication of spin-current-induced domain-wall-nucleation device in planar configuration. / Kimura, Takashi; Wakaya, Fujio; Gamo, Kenji.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 6, 01.11.2002, p. 2814-2818.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of spin-current-induced domain-wall-nucleation device in planar configuration
AU - Kimura, Takashi
AU - Wakaya, Fujio
AU - Gamo, Kenji
PY - 2002/11/1
Y1 - 2002/11/1
N2 - A method for investigating the spin-transfer effect using planar configuration in ferromagnet/nonmagnet/ferromagnet structure was developed. An attempt was made to observe the changes of the switching field in the magnetic wire due to the spin injection. In one device using FIB in situ process, the clear change was not observed. Clear changes of the switching field were observed and were quantitatively consistent with the theoretical analysis based on the spin-transfer effect. It was found that the interface fabricated by the multi-angle deposition is effective to prevent the spin-flip scattering.
AB - A method for investigating the spin-transfer effect using planar configuration in ferromagnet/nonmagnet/ferromagnet structure was developed. An attempt was made to observe the changes of the switching field in the magnetic wire due to the spin injection. In one device using FIB in situ process, the clear change was not observed. Clear changes of the switching field were observed and were quantitatively consistent with the theoretical analysis based on the spin-transfer effect. It was found that the interface fabricated by the multi-angle deposition is effective to prevent the spin-flip scattering.
UR - http://www.scopus.com/inward/record.url?scp=0036883163&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036883163&partnerID=8YFLogxK
U2 - 10.1116/1.1518014
DO - 10.1116/1.1518014
M3 - Article
AN - SCOPUS:0036883163
VL - 20
SP - 2814
EP - 2818
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 0734-211X
IS - 6
ER -