Fabrication of spin-current-induced domain-wall-nucleation device in planar configuration

Takashi Kimura, Fujio Wakaya, Kenji Gamo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A method for investigating the spin-transfer effect using planar configuration in ferromagnet/nonmagnet/ferromagnet structure was developed. An attempt was made to observe the changes of the switching field in the magnetic wire due to the spin injection. In one device using FIB in situ process, the clear change was not observed. Clear changes of the switching field were observed and were quantitatively consistent with the theoretical analysis based on the spin-transfer effect. It was found that the interface fabricated by the multi-angle deposition is effective to prevent the spin-flip scattering.

Original languageEnglish
Pages (from-to)2814-2818
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number6
DOIs
Publication statusPublished - Nov 1 2002
Externally publishedYes

Fingerprint

Domain walls
Induced currents
domain wall
Nucleation
nucleation
Fabrication
fabrication
configurations
Wire
Scattering
wire
injection
scattering

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Fabrication of spin-current-induced domain-wall-nucleation device in planar configuration. / Kimura, Takashi; Wakaya, Fujio; Gamo, Kenji.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 6, 01.11.2002, p. 2814-2818.

Research output: Contribution to journalArticle

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