Fabrication of Thin Si Films and Ultra Thin Si Dioxide Films by Using Electron Cyclotron Resonance Plasmas and Electrical Evaluation of the Fabricated Thin Films

Hiroshi Nakashima

doi:10.3131/jvsj.45.739

Fabrication of Thin Si Films and Ultra Thin Si Dioxide Films by Using Electron Cyclotron Resonance Plasmas and Electrical Evaluation of the Fabricated Thin Films

Hiroshi Nakashima

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	739-744
Number of pages	6
Journal	Shinku/Journal of the Vacuum Society of Japan
Volume	45
Issue number	10
DOIs	https://doi.org/10.3131/jvsj.45.739
Publication status	Published - Jan 2002

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.3131/jvsj.45.739

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title = "Fabrication of Thin Si Films and Ultra Thin Si Dioxide Films by Using Electron Cyclotron Resonance Plasmas and Electrical Evaluation of the Fabricated Thin Films",

author = "Hiroshi Nakashima",

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Fabrication of Thin Si Films and Ultra Thin Si Dioxide Films by Using Electron Cyclotron Resonance Plasmas and Electrical Evaluation of the Fabricated Thin Films

All Science Journal Classification (ASJC) codes

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