Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method

Terumitsu Tanaka, Hiroki Kurisu, Mitsuru Matsuura, Yoshihiro Shimosato, Shigenobu Okada, Kazunori Oshiro, Hirotaka Fujimori, Setsuo Yamamoto

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Abstract

Well-crystallized Ni-Zn ferrite (Ni0.4 Zn0.6 Fe2 O4) highly oriented ultrathin films were obtained at a substrate temperature of 200 °C by a reactive sputtering method utilizing electron cyclotron resonance microwave plasma, which is very effective to crystallize oxide or nitride materials without heat treatment. Thin films of Ni-Zn ferrite deposited on a MgO (100) underlayer showed an intense X-ray-diffraction peak of (400) from the Ni-Zn ferrite as compared to similar films deposited directly onto thermally oxidized Si substrates. A 1.5-nm-thick Ni-Zn ferrite film, which corresponds to twice the lattice constant for bulk Ni-Zn ferrite, crystallized on a MgO (100) underlayer.

Original languageEnglish
Article number08N507
JournalJournal of Applied Physics
Volume99
Issue number8
DOIs
Publication statusPublished - May 25 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Tanaka, T., Kurisu, H., Matsuura, M., Shimosato, Y., Okada, S., Oshiro, K., Fujimori, H., & Yamamoto, S. (2006). Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method. Journal of Applied Physics, 99(8), [08N507]. https://doi.org/10.1063/1.2169538