Fabrication of UV-LED using ZnO nanowires directly grown on p-GaN film by NAPLD

N. Tetsuyama, Y. Ishida, M. Higashihata, Daisuke Nakamura, T. Okada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the direct of ZnO nanowires on a p-GaN film by Nano-particle Assisted Pulsed Laser Deposition (NAPLD) and the ultra-violet electroluminescence characteristic from the fabricated p-n heterojunction LED.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
DOIs
Publication statusPublished - Oct 18 2013
Event10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 - Kyoto, Japan
Duration: Jun 30 2013Jul 4 2013

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Other

Other10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
CountryJapan
CityKyoto
Period6/30/137/4/13

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Tetsuyama, N., Ishida, Y., Higashihata, M., Nakamura, D., & Okada, T. (2013). Fabrication of UV-LED using ZnO nanowires directly grown on p-GaN film by NAPLD. In 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 [6600380] (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2013.6600380