Abstract
Bismuth titanate (Bi4Ti3O12; BIT)-based ferroelectric materials are proposed from the view of the "Site-engineering", where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi, M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi, M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi, La)4Ti3O12 and (Bi, Nd)4Ti3O12 films has been improve by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.
Original language | English |
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Pages (from-to) | 41-46 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 688 |
Publication status | Published - Jan 1 2002 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering