Fabrication of V-substituted (Bi, M)4Ti3O12 [M = lanthanoids] thin films by chemical solution deposition method

H. Uchida, H. Yoshikawa, I. Okada, H. Matsuda, T. Iijima, T. Watanabe, H. Funakubo

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5 Citations (Scopus)

Abstract

Bismuth titanate (Bi4Ti3O12; BIT)-based ferroelectric materials are proposed from the view of the "Site-engineering", where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi, M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi, M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi, La)4Ti3O12 and (Bi, Nd)4Ti3O12 films has been improve by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.

Original languageEnglish
Pages (from-to)41-46
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume688
Publication statusPublished - Jan 1 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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