Abstract
Bismuth titanate (Bi4Ti3O12; BIT)-based ferroelectric materials are proposed from the view of the "Site-engineering", where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi, M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi, M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi, La)4Ti3O12 and (Bi, Nd)4Ti3O12 films has been improve by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.
| Original language | English |
|---|---|
| Pages (from-to) | 41-46 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 688 |
| Publication status | Published - Jan 1 2002 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Fabrication of V-substituted (Bi, M)4Ti3O12 [M = lanthanoids] thin films by chemical solution deposition method. / Uchida, H.; Yoshikawa, H.; Okada, I.; Matsuda, H.; Iijima, T.; Watanabe, T.; Funakubo, H.
In: Materials Research Society Symposium - Proceedings, Vol. 688, 01.01.2002, p. 41-46.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of V-substituted (Bi, M)4Ti3O12 [M = lanthanoids] thin films by chemical solution deposition method
AU - Uchida, H.
AU - Yoshikawa, H.
AU - Okada, I.
AU - Matsuda, H.
AU - Iijima, T.
AU - Watanabe, T.
AU - Funakubo, H.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - Bismuth titanate (Bi4Ti3O12; BIT)-based ferroelectric materials are proposed from the view of the "Site-engineering", where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi, M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi, M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi, La)4Ti3O12 and (Bi, Nd)4Ti3O12 films has been improve by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.
AB - Bismuth titanate (Bi4Ti3O12; BIT)-based ferroelectric materials are proposed from the view of the "Site-engineering", where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi, M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi, M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi, La)4Ti3O12 and (Bi, Nd)4Ti3O12 films has been improve by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.
UR - http://www.scopus.com/inward/record.url?scp=0036352270&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036352270&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0036352270
VL - 688
SP - 41
EP - 46
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -