Fabrication of vertical thin film FEA using ion-induced bending technique

T. Yoshida, C. Yasumuro, M. Nagao, S. Kanemaru, A. Baba, Tanemasa Asano

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

We proposed a vertical thin film (VTF) formed by ion induced bending technique to realize a field emission display (FED). The bending technique can form micro-meter sized high-aspect ratio emitting tip from 100-nm-thick thin film by ion irradiation without thick film deposition. However, the top of the VTF becomes blunt during ion irradiation even though the film edge was very sharp before the irradiation. We demonstrate the sharpening method of the VTF using Ar ion etching. The apex radius of the VTF emitter decreased from 100 nm to 20 nm. We fabricated gated VTF emitter and confirmed electron emission from sharpened tip.

Original languageEnglish
Pages2209-2212
Number of pages4
Publication statusPublished - Dec 1 2007
Event14th International Display Workshops, IDW '07 - Sapporo, Japan
Duration: Dec 5 2007Dec 5 2007

Other

Other14th International Display Workshops, IDW '07
Country/TerritoryJapan
CitySapporo
Period12/5/0712/5/07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics

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