Fabrication of ZnInON/ZnO multi-quantum well solar cells

Koichi Matsushima; Ryota Shimizu; Tomoaki Ide; Daisuke Yamashita; Hyunwoong Seo; Kazunori Koga; Masaharu Shiratani; Naho Itagaki

doi:10.1016/j.tsf.2015.01.012

Fabrication of ZnInON/ZnO multi-quantum well solar cells

Koichi Matsushima, Ryota Shimizu, Tomoaki Ide, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

Electronic Devices

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15 Citations (Scopus)

Abstract

We report on fabrication and photovoltaic characteristics of solar cells with ZnInON/ZnO multi-quantum wells (MQWs) in the intrinsic layer of p-i-n structure by RF magnetron sputtering. We employed two kinds of p layers: one is p-GaN and the other is p-Si. Under solar simulator light, the short-circuit current (J_sc) and the open-circuit voltage (V_oc) of the solar cells on p-GaN templates are 1.9 μA/cm² and 0.16 V, whereas J_sc and V_oc are enhanced to 2.5 μA/cm² and 0.19 V under simultaneous irradiation of green laser light (532 nm) and the solar simulator light. Solar cells on p-Si substrates do not show such enhancement. A possible origin of the enhancement is a large piezoelectric field generated in strained ZnInON wells coherently grown on p-GaN template.

Original language	English
Pages (from-to)	106-111
Number of pages	6
Journal	Thin Solid Films
Volume	587
DOIs	https://doi.org/10.1016/j.tsf.2015.01.012
Publication status	Published - Jul 31 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2015.01.012

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title = "Fabrication of ZnInON/ZnO multi-quantum well solar cells",

abstract = "We report on fabrication and photovoltaic characteristics of solar cells with ZnInON/ZnO multi-quantum wells (MQWs) in the intrinsic layer of p-i-n structure by RF magnetron sputtering. We employed two kinds of p layers: one is p-GaN and the other is p-Si. Under solar simulator light, the short-circuit current (Jsc) and the open-circuit voltage (Voc) of the solar cells on p-GaN templates are 1.9 μA/cm2 and 0.16 V, whereas Jsc and Voc are enhanced to 2.5 μA/cm2 and 0.19 V under simultaneous irradiation of green laser light (532 nm) and the solar simulator light. Solar cells on p-Si substrates do not show such enhancement. A possible origin of the enhancement is a large piezoelectric field generated in strained ZnInON wells coherently grown on p-GaN template.",

author = "Koichi Matsushima and Ryota Shimizu and Tomoaki Ide and Daisuke Yamashita and Hyunwoong Seo and Kazunori Koga and Masaharu Shiratani and Naho Itagaki",

note = "Funding Information: We wish to thank Messrs. K. Utsumi, K. Omi, and T. Shibutami for skillful technical assistance and fruitful discussion. This work was partially supported by Japan Society for the Promotion of Science (JSPS) Grant-in-Aid for Scientific Research, Japan Science and Technology Agency (JST) PRESTO, Grant-in-Aid for JSPS Fellows , and Kyushu University Interdisciplinary Programs in Education and Projects in Research Development. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

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doi = "10.1016/j.tsf.2015.01.012",

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T1 - Fabrication of ZnInON/ZnO multi-quantum well solar cells

AU - Matsushima, Koichi

AU - Shimizu, Ryota

AU - Ide, Tomoaki

AU - Yamashita, Daisuke

AU - Seo, Hyunwoong

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Itagaki, Naho

N1 - Funding Information: We wish to thank Messrs. K. Utsumi, K. Omi, and T. Shibutami for skillful technical assistance and fruitful discussion. This work was partially supported by Japan Society for the Promotion of Science (JSPS) Grant-in-Aid for Scientific Research, Japan Science and Technology Agency (JST) PRESTO, Grant-in-Aid for JSPS Fellows , and Kyushu University Interdisciplinary Programs in Education and Projects in Research Development. Publisher Copyright: © 2015 Elsevier B.V.

PY - 2015/7/31

Y1 - 2015/7/31

N2 - We report on fabrication and photovoltaic characteristics of solar cells with ZnInON/ZnO multi-quantum wells (MQWs) in the intrinsic layer of p-i-n structure by RF magnetron sputtering. We employed two kinds of p layers: one is p-GaN and the other is p-Si. Under solar simulator light, the short-circuit current (Jsc) and the open-circuit voltage (Voc) of the solar cells on p-GaN templates are 1.9 μA/cm2 and 0.16 V, whereas Jsc and Voc are enhanced to 2.5 μA/cm2 and 0.19 V under simultaneous irradiation of green laser light (532 nm) and the solar simulator light. Solar cells on p-Si substrates do not show such enhancement. A possible origin of the enhancement is a large piezoelectric field generated in strained ZnInON wells coherently grown on p-GaN template.

AB - We report on fabrication and photovoltaic characteristics of solar cells with ZnInON/ZnO multi-quantum wells (MQWs) in the intrinsic layer of p-i-n structure by RF magnetron sputtering. We employed two kinds of p layers: one is p-GaN and the other is p-Si. Under solar simulator light, the short-circuit current (Jsc) and the open-circuit voltage (Voc) of the solar cells on p-GaN templates are 1.9 μA/cm2 and 0.16 V, whereas Jsc and Voc are enhanced to 2.5 μA/cm2 and 0.19 V under simultaneous irradiation of green laser light (532 nm) and the solar simulator light. Solar cells on p-Si substrates do not show such enhancement. A possible origin of the enhancement is a large piezoelectric field generated in strained ZnInON wells coherently grown on p-GaN template.

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JO - Thin Solid Films

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Fabrication of ZnInON/ZnO multi-quantum well solar cells

Abstract

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