Facile fabrication method for pn -type and ambipolar transport polyphenylenevinylene-based thin-film field-effect transistors by blending C60 fullerene

Y. Hayashi, H. Kanamori, I. Yamada, A. Takasu, S. Takagi, K. Kaneko

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    45 Citations (Scopus)

    Abstract

    We have demonstrated the solution-processed p - and n -type transports including ambipolar transport organic thin-film transistors (OTFTs), required for complementary thin-film integrated circuit technology, by a facile method of blending the n -type C60 and the p -type [poly(2-methoxy-5-[2'-ethyl-hexyloxy]- 1,4-phenylene vinylene] (MEH-PPV). The carrier transport of PPV-based thin-film field-effect transistors with various C60 compositions are investigated by using the field-effect gated structure. One of the important findings is that tunable electronic properties of OTFTs are achieved by controlling C60 composition using a simple and an inexpensive spin-cast technology. The mobility increases with increase in the C60 composition in both n - and p -type OTFTs. Temperature measurements on n -type OTFTs revealed that transport follows a thermally activated hopping transport model with small activation energy.

    Original languageEnglish
    Article number052104
    Pages (from-to)1-3
    Number of pages3
    JournalApplied Physics Letters
    Volume86
    Issue number5
    DOIs
    Publication statusPublished - Jan 31 2005

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy (miscellaneous)

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