Fast photothermal relaxation processes in metals and semiconductors studied using transient reflecting gratings

Hiroyuki Nishimura, Akira Harata, Tsuguo Sawada

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Dynamic processes forming the transient reflecting gratings are experimentally investigated in the picosecond time regime for both metals and semiconductors. The shapes of the initial parts of the grating signals were examined with respect to the pump and probe intensities, optical configurations of polarization directions and ion implantation doses. For metals, the rising part is influenced by the temperature grating independently of the corrugation grating due to surface acoustic waves. For silicon, the peak or shoulder at the initial part is attributed to the concentration grating of the photoexcited carriers, and it directly reflects the photothermal relaxation rate.

Original languageEnglish
Pages (from-to)5149-5154
Number of pages6
JournalJapanese Journal of Applied Physics
Volume32
Issue number11 R
DOIs
Publication statusPublished - Nov 1993

Fingerprint

Relaxation processes
gratings
Semiconductor materials
Metals
Ion implantation
metals
Surface waves
Acoustic waves
Pumps
Polarization
Silicon
shoulders
ion implantation
implantation
Temperature
pumps
dosage
acoustics
probes
silicon

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Fast photothermal relaxation processes in metals and semiconductors studied using transient reflecting gratings. / Nishimura, Hiroyuki; Harata, Akira; Sawada, Tsuguo.

In: Japanese Journal of Applied Physics, Vol. 32, No. 11 R, 11.1993, p. 5149-5154.

Research output: Contribution to journalArticle

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