Fast recovery and low Vf Characteristics on SiGe/Si/Si pin diodes

Fumihiko Hirose, Yutaka Takahashi, Masashi Mukaida

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Fast recovery characteristics can be obtained in the SiGe/Si/Si pin diodes compared to the conventional Si pin diodes without any intentional lifetime controls into the i-layer. This technique also makes little change in the on-state voltage drop (Vf), which suggests the low power dissipation with the fast operation in the switching circuits. It is highly possible that the thin SiGe p layer with the suppressed minority carrier lifetime enhances the diffusion current in the SiGe pin diode, where the stored minority carrier effectively decreases in the Si i-layer. It is also possible that the recombination of minority carrier at the interface of the SiGe and the metal layers increases the diffusion current in the pin diode.

Original languageEnglish
Pages1015-1020
Number of pages6
Publication statusPublished - Dec 1 2004
Externally publishedYes
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Other

OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Hirose, F., Takahashi, Y., & Mukaida, M. (2004). Fast recovery and low Vf Characteristics on SiGe/Si/Si pin diodes. 1015-1020. Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.