Fast recovery characteristics can be obtained in the SiGe/Si/Si pin diodes compared to the conventional Si pin diodes without any intentional lifetime controls into the i-layer. This technique also makes little change in the on-state voltage drop (Vf), which suggests the low power dissipation with the fast operation in the switching circuits. It is highly possible that the thin SiGe p layer with the suppressed minority carrier lifetime enhances the diffusion current in the SiGe pin diode, where the stored minority carrier effectively decreases in the Si i-layer. It is also possible that the recombination of minority carrier at the interface of the SiGe and the metal layers increases the diffusion current in the pin diode.
|Number of pages||6|
|Publication status||Published - Dec 1 2004|
|Event||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States|
Duration: Oct 3 2004 → Oct 8 2004
|Other||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium|
|Period||10/3/04 → 10/8/04|
All Science Journal Classification (ASJC) codes