Favorable elements for an indium-based amorphous oxide TFT channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) systems

Amita Goyal, Tatsuya Iwasaki, Naho Itagaki, Tohru Den, Hideya Kumomi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Various kinds of thin film transistors (TFTs) with In-X-O (X= B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo and Sn) channel layer were studied using combinatorial technique. The channel layers were deposited by sputtering on unheated substrates and post annealing of TFTs was carried out at 300°C in air for 1 hour. Most of the In-X-O TFTs showed the switching behavior except for TFTs with In-Mo-O and In-Sn-O channel layer. High TFT performance is obtained in the case of In-Ge-O (μFE ∼ 6cm2/V-s, on/off ∼ 10 10), In-Zn-O (μFE ∼ 26cm2/V-s, on/off ∼ 1010), In-Si-O (μFE ∼ 3 cm2/V-s, on/off ∼ 109). The electron mobility of In-X-O shows inverse correlation with the electron effective mass, me, of X-O, except when X is a transition metal element.

Original languageEnglish
Title of host publicationTransparent Conductors and Semiconductors for Optoelectronics
Pages43-48
Number of pages6
Volume1109
Publication statusPublished - 2009
Externally publishedYes
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 2 2009

Other

Other2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/30/0912/2/09

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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