Favorable elements for an indium-based amorphous oxide TFT channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) systems

Amita Goyal, Tatsuya Iwasaki, Naho Itagaki, Tohru Den, Hideya Kumomi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Various kinds of thin film transistors (TFTs) with In-X-O (X= B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo and Sn) channel layer were studied using combinatorial technique. The channel layers were deposited by sputtering on unheated substrates and post annealing of TFTs was carried out at 300°C in air for 1 hour. Most of the In-X-O TFTs showed the switching behavior except for TFTs with In-Mo-O and In-Sn-O channel layer. High TFT performance is obtained in the case of In-Ge-O (μFE ∼ 6cm2/V-s, on/off ∼ 10 10), In-Zn-O (μFE ∼ 26cm2/V-s, on/off ∼ 1010), In-Si-O (μFE ∼ 3 cm2/V-s, on/off ∼ 109). The electron mobility of In-X-O shows inverse correlation with the electron effective mass, me, of X-O, except when X is a transition metal element.

Original languageEnglish
Title of host publicationTransparent Conductors and Semiconductors for Optoelectronics
Pages43-48
Number of pages6
Volume1109
Publication statusPublished - 2009
Externally publishedYes
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 2 2009

Other

Other2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/30/0912/2/09

Fingerprint

Indium
Thin film transistors
Oxide films
indium
transistors
oxides
thin films
Electron mobility
electron mobility
Chemical elements
Transition metals
Sputtering
sputtering
transition metals
Annealing
annealing
Electrons
air
Substrates
Air

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Goyal, A., Iwasaki, T., Itagaki, N., Den, T., & Kumomi, H. (2009). Favorable elements for an indium-based amorphous oxide TFT channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) systems. In Transparent Conductors and Semiconductors for Optoelectronics (Vol. 1109, pp. 43-48)

Favorable elements for an indium-based amorphous oxide TFT channel : Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) systems. / Goyal, Amita; Iwasaki, Tatsuya; Itagaki, Naho; Den, Tohru; Kumomi, Hideya.

Transparent Conductors and Semiconductors for Optoelectronics. Vol. 1109 2009. p. 43-48.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Goyal, A, Iwasaki, T, Itagaki, N, Den, T & Kumomi, H 2009, Favorable elements for an indium-based amorphous oxide TFT channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) systems. in Transparent Conductors and Semiconductors for Optoelectronics. vol. 1109, pp. 43-48, 2009 MRS Fall Meeting, Boston, MA, United States, 11/30/09.
Goyal A, Iwasaki T, Itagaki N, Den T, Kumomi H. Favorable elements for an indium-based amorphous oxide TFT channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) systems. In Transparent Conductors and Semiconductors for Optoelectronics. Vol. 1109. 2009. p. 43-48
Goyal, Amita ; Iwasaki, Tatsuya ; Itagaki, Naho ; Den, Tohru ; Kumomi, Hideya. / Favorable elements for an indium-based amorphous oxide TFT channel : Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) systems. Transparent Conductors and Semiconductors for Optoelectronics. Vol. 1109 2009. pp. 43-48
@inproceedings{a076af788fd54c0f8b4adfac5882f52a,
title = "Favorable elements for an indium-based amorphous oxide TFT channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) systems",
abstract = "Various kinds of thin film transistors (TFTs) with In-X-O (X= B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo and Sn) channel layer were studied using combinatorial technique. The channel layers were deposited by sputtering on unheated substrates and post annealing of TFTs was carried out at 300°C in air for 1 hour. Most of the In-X-O TFTs showed the switching behavior except for TFTs with In-Mo-O and In-Sn-O channel layer. High TFT performance is obtained in the case of In-Ge-O (μFE ∼ 6cm2/V-s, on/off ∼ 10 10), In-Zn-O (μFE ∼ 26cm2/V-s, on/off ∼ 1010), In-Si-O (μFE ∼ 3 cm2/V-s, on/off ∼ 109). The electron mobility of In-X-O shows inverse correlation with the electron effective mass, me, of X-O, except when X is a transition metal element.",
author = "Amita Goyal and Tatsuya Iwasaki and Naho Itagaki and Tohru Den and Hideya Kumomi",
year = "2009",
language = "English",
isbn = "9781617383922",
volume = "1109",
pages = "43--48",
booktitle = "Transparent Conductors and Semiconductors for Optoelectronics",

}

TY - GEN

T1 - Favorable elements for an indium-based amorphous oxide TFT channel

T2 - Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) systems

AU - Goyal, Amita

AU - Iwasaki, Tatsuya

AU - Itagaki, Naho

AU - Den, Tohru

AU - Kumomi, Hideya

PY - 2009

Y1 - 2009

N2 - Various kinds of thin film transistors (TFTs) with In-X-O (X= B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo and Sn) channel layer were studied using combinatorial technique. The channel layers were deposited by sputtering on unheated substrates and post annealing of TFTs was carried out at 300°C in air for 1 hour. Most of the In-X-O TFTs showed the switching behavior except for TFTs with In-Mo-O and In-Sn-O channel layer. High TFT performance is obtained in the case of In-Ge-O (μFE ∼ 6cm2/V-s, on/off ∼ 10 10), In-Zn-O (μFE ∼ 26cm2/V-s, on/off ∼ 1010), In-Si-O (μFE ∼ 3 cm2/V-s, on/off ∼ 109). The electron mobility of In-X-O shows inverse correlation with the electron effective mass, me, of X-O, except when X is a transition metal element.

AB - Various kinds of thin film transistors (TFTs) with In-X-O (X= B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo and Sn) channel layer were studied using combinatorial technique. The channel layers were deposited by sputtering on unheated substrates and post annealing of TFTs was carried out at 300°C in air for 1 hour. Most of the In-X-O TFTs showed the switching behavior except for TFTs with In-Mo-O and In-Sn-O channel layer. High TFT performance is obtained in the case of In-Ge-O (μFE ∼ 6cm2/V-s, on/off ∼ 10 10), In-Zn-O (μFE ∼ 26cm2/V-s, on/off ∼ 1010), In-Si-O (μFE ∼ 3 cm2/V-s, on/off ∼ 109). The electron mobility of In-X-O shows inverse correlation with the electron effective mass, me, of X-O, except when X is a transition metal element.

UR - http://www.scopus.com/inward/record.url?scp=77954251387&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954251387&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:77954251387

SN - 9781617383922

VL - 1109

SP - 43

EP - 48

BT - Transparent Conductors and Semiconductors for Optoelectronics

ER -