Fe gettering by p+ layer in bifacial Si solar cell fabrication

T. Terakawa, D. Wang, H. Nakashima

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Gettering behaviors of Fe into solar cell grade Si are investigated by deep level transient spectroscopy. The samples contaminated with Fe in the range of the concentration of 1.5×1012-2.0×10 14 cm-3 were annealed at 600 °C to induce gettering. It is shown that the surface layer gettering behaviors of Fe for the sample without p+ layer strongly depend on the Fe contamination level, in which the surface layer gettering is not effective for the sample with low level contamination <1×1013 cm-3 but effective for the sample with middle level contamination of 1-5×1013 cm-3. In contrast, the samples with p+ layer show effective gettering for low and middle level contaminations. The gettering mechanisms in solar cell grade Si without and with p+ layer are discussed in details.

Original languageEnglish
Pages (from-to)231-235
Number of pages5
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - Apr 1 2006
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: Jul 24 2005Jul 29 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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