The gettering behavior of Fe into Si at 600°C for samples with and without a p+ layer was investigated by deep-level transient spectroscopy. These samples contaminated with Fe at 930°C for 4 h at a concentration of 4.6 × 1013 cm-3 were annealed at 600°C to induce gettering. The concentration of Fe atoms in the bulk Si markedly decreased-with annealing time at 600°C. It was found that the gettering site of Fe is not the p+ layer but the very thin surface layer.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||6 A|
|Publication status||Published - Jun 2005|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)