Fe gettering for high-efficiency solar cell fabrication

Takeshi Terakawa, Dong Wang, Hiroshi Nakashima

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The gettering behavior of Fe into Si at 600°C for samples with and without a p+ layer was investigated by deep-level transient spectroscopy. These samples contaminated with Fe at 930°C for 4 h at a concentration of 4.6 × 1013 cm-3 were annealed at 600°C to induce gettering. The concentration of Fe atoms in the bulk Si markedly decreased-with annealing time at 600°C. It was found that the gettering site of Fe is not the p+ layer but the very thin surface layer.

Original languageEnglish
Pages (from-to)4060-4061
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number6 A
DOIs
Publication statusPublished - Jun 2005

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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