Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ZrN and HfN/Ge contacts showed FLP alleviation similar to TiN/Ge. Especially, ZrN indicated stronger alleviation than TiN. About all materials, the ΦBPs estimated using J-V and C-V methods are almost the same. It is supposed that the interfacial structures of metal nitride/Ge are uniform.

Original languageEnglish
Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PublisherIEEE Computer Society
Pages91-92
Number of pages2
ISBN (Print)9781479954285
DOIs
Publication statusPublished - Jan 1 2014
Event7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore
Duration: Jun 2 2014Jun 4 2014

Publication series

Name2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
CountrySingapore
CitySingapore
Period6/2/146/4/14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Yamamoto, K., Wang, D., & Nakashima, H. (2014). Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 91-92). [6874625] (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874625