Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ZrN and HfN/Ge contacts showed FLP alleviation similar to TiN/Ge. Especially, ZrN indicated stronger alleviation than TiN. About all materials, the ΦBPs estimated using J-V and C-V methods are almost the same. It is supposed that the interfacial structures of metal nitride/Ge are uniform.

Original languageEnglish
Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PublisherIEEE Computer Society
Pages91-92
Number of pages2
ISBN (Print)9781479954285
DOIs
Publication statusPublished - 2014
Event7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore
Duration: Jun 2 2014Jun 4 2014

Other

Other7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
CountrySingapore
CitySingapore
Period6/2/146/4/14

Fingerprint

Fermi level
Nitrides
Metals

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Yamamoto, K., Wang, D., & Nakashima, H. (2014). Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 91-92). [6874625] IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874625

Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces. / Yamamoto, Keisuke; Wang, Dong; Nakashima, Hiroshi.

2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. p. 91-92 6874625.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamamoto, K, Wang, D & Nakashima, H 2014, Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces. in 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014., 6874625, IEEE Computer Society, pp. 91-92, 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, Singapore, 6/2/14. https://doi.org/10.1109/ISTDM.2014.6874625
Yamamoto K, Wang D, Nakashima H. Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society. 2014. p. 91-92. 6874625 https://doi.org/10.1109/ISTDM.2014.6874625
Yamamoto, Keisuke ; Wang, Dong ; Nakashima, Hiroshi. / Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces. 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. pp. 91-92
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