Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces

Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    ZrN and HfN/Ge contacts showed FLP alleviation similar to TiN/Ge. Especially, ZrN indicated stronger alleviation than TiN. About all materials, the ΦBPs estimated using J-V and C-V methods are almost the same. It is supposed that the interfacial structures of metal nitride/Ge are uniform.

    Original languageEnglish
    Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
    PublisherIEEE Computer Society
    Pages91-92
    Number of pages2
    ISBN (Print)9781479954285
    DOIs
    Publication statusPublished - 2014
    Event7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore
    Duration: Jun 2 2014Jun 4 2014

    Publication series

    Name2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

    Other

    Other7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
    CountrySingapore
    CitySingapore
    Period6/2/146/4/14

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering

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