Ferroelectric property of a-/b-axis-oriented epitaxial Sr0.8Bi2.2Ta2O9 thin films grown by metalorganic chemical vapor deposition

Takayuki Watanabe, Tomohiro Sakai, Hiroshi Funakubo, Keisuke Saito, Minoru Osada, Mamoru Yoshimoto, Atsushi Sasaki, Jin Liu, Masato Kakihana

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15 Citations (Scopus)

Abstract

In this study, a-/b-axis-oriented epitaxial Sr0.8Bi2.2Ta2O9 (SBT) thin films were grown on (101)TiO2 and (101)RuO2//(110)Al2O3 substrates by metalorganic chemical vapor deposition (MOCVD). By several X-ray diffraction techniques, the a-/b-axis-oriented epitaxial growth on the substrate with a rutile structure was confirmed. The leakage current density of SBT was characterized along the a-/b-axis and c-axis, and the lower defect density in the pseudoperovskite layer was revealed by comparison with Bi4Ti3O12. The saturation polarization (Ps), remanent polarization (Pr), and coercive field (Ec) were 6.0μC/cm2, 3.1μC/cm2 and 54 kV/cm, respectively. The estimated spontaneous polarization along the a-axis corrected by the a-/b-domain volume ratio was 20μC/cm2, which is identical to previously estimated values. The switching charge versus the repetitive 1.2×1010 switching cycles remained almost constant, indicating a superior fatigue endurance along the direction parallel to the (Bi2O2)2+ layer.

Original languageEnglish
Pages (from-to)L1478-L1481
JournalJapanese Journal of Applied Physics
Volume41
Issue number12B
DOIs
Publication statusPublished - Dec 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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