Ferroelectric property of a-/b-axis-oriented epitaxial Sr0.8Bi2.2Ta2O9 thin films grown by metalorganic chemical vapor deposition

Takayuki Watanabe, Tomohiro Sakai, Hiroshi Funakubo, Keisuke Saito, Minoru Osada, Mamoru Yoshimoto, Atsushi Sasaki, Jin Liu, Masato Kakihana

Research output: Contribution to journalArticle

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Abstract

In this study, a-/b-axis-oriented epitaxial Sr0.8Bi2.2Ta2O9 (SBT) thin films were grown on (101)TiO2 and (101)RuO2//(110)Al2O3 substrates by metalorganic chemical vapor deposition (MOCVD). By several X-ray diffraction techniques, the a-/b-axis-oriented epitaxial growth on the substrate with a rutile structure was confirmed. The leakage current density of SBT was characterized along the a-/b-axis and c-axis, and the lower defect density in the pseudoperovskite layer was revealed by comparison with Bi4Ti3O12. The saturation polarization (Ps), remanent polarization (Pr), and coercive field (Ec) were 6.0μC/cm2, 3.1μC/cm2 and 54 kV/cm, respectively. The estimated spontaneous polarization along the a-axis corrected by the a-/b-domain volume ratio was 20μC/cm2, which is identical to previously estimated values. The switching charge versus the repetitive 1.2×1010 switching cycles remained almost constant, indicating a superior fatigue endurance along the direction parallel to the (Bi2O2)2+ layer.

Original languageEnglish
Pages (from-to)L1478-L1481
JournalJapanese Journal of Applied Physics
Volume41
Issue number12B
DOIs
Publication statusPublished - Jan 1 2002
Externally publishedYes

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Epitaxial films
Metallorganic chemical vapor deposition
Ferroelectric materials
metalorganic chemical vapor deposition
Polarization
Thin films
Remanence
Defect density
Substrates
thin films
Epitaxial growth
Leakage currents
Durability
Current density
Fatigue of materials
X ray diffraction
polarization
endurance
rutile
leakage

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ferroelectric property of a-/b-axis-oriented epitaxial Sr0.8Bi2.2Ta2O9 thin films grown by metalorganic chemical vapor deposition. / Watanabe, Takayuki; Sakai, Tomohiro; Funakubo, Hiroshi; Saito, Keisuke; Osada, Minoru; Yoshimoto, Mamoru; Sasaki, Atsushi; Liu, Jin; Kakihana, Masato.

In: Japanese Journal of Applied Physics, Vol. 41, No. 12B, 01.01.2002, p. L1478-L1481.

Research output: Contribution to journalArticle

Watanabe, Takayuki ; Sakai, Tomohiro ; Funakubo, Hiroshi ; Saito, Keisuke ; Osada, Minoru ; Yoshimoto, Mamoru ; Sasaki, Atsushi ; Liu, Jin ; Kakihana, Masato. / Ferroelectric property of a-/b-axis-oriented epitaxial Sr0.8Bi2.2Ta2O9 thin films grown by metalorganic chemical vapor deposition. In: Japanese Journal of Applied Physics. 2002 ; Vol. 41, No. 12B. pp. L1478-L1481.
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