Ferroelectric property of epitaxial Bi4Ti3O12 films prepared by metalorganic chemical vapor deposition

Takayuki Watanabe; Hiroshi Funakubo; Keisuke Saito

doi:10.1557/JMR.2001.0046

Ferroelectric property of epitaxial Bi₄Ti₃O₁₂ films prepared by metalorganic chemical vapor deposition

Takayuki Watanabe, Hiroshi Funakubo, Keisuke Saito

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

The orientation dependence of the ferroelectricity of epitaxially grown Bi₄Ti₃O₁₂ thin films was investigated. The (001)-, (118)-, and (104)-oriented Bi₄Ti₃O₁₂ films were epitaxially grown on (100)_cCaRuO₃//(100)SrTiO₃, (110)_cSrRuO₃//(110)SrTiO₃, and (111)_cSrRuO₃//(111)SrTiO₃ substrates, respectively, by metalorganic chemical vapor deposition. Ferroelectric property with different magnitude was observed for (001)- and (118)-oriented films but for (104)-oriented film due to its large leakage current. The remanent polarization and the coercive field were 1.5 μC/cm² and 15 kV/cm, 16.5 μC/cm² and 132 kV/cm for the (001)- and (118)-oriented thin films, respectively. The spontaneous polarization (P_s) was 4.0 μC/cm² and 27.0 μC/cm² for (001)- and (118)-oriented films, respectively. This was different from the result of SrBi₂Ta₂O₉ in that the ferroelectricity was not observed for (001)-oriented one, and was in good agreement with the estimation from the crystal structure. The estimated P_s values along the c and a axes of Bi₄Ti₃O₁₂ were 4.0 and 48.4 μC/cm², respectively, and agreed well with the reported values for the single crystal. Furthermore, both films showed good fatigue endurance after 7.8 × 10¹⁰ switching cycles measured with 500 kHz rectangular pulses.

Original language	English
Pages (from-to)	303-307
Number of pages	5
Journal	Journal of Materials Research
Volume	16
Issue number	1
DOIs	https://doi.org/10.1557/JMR.2001.0046
Publication status	Published - Jan 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/JMR.2001.0046

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title = "Ferroelectric property of epitaxial Bi4Ti3O12 films prepared by metalorganic chemical vapor deposition",

abstract = "The orientation dependence of the ferroelectricity of epitaxially grown Bi4Ti3O12 thin films was investigated. The (001)-, (118)-, and (104)-oriented Bi4Ti3O12 films were epitaxially grown on (100)cCaRuO3//(100)SrTiO3, (110)cSrRuO3//(110)SrTiO3, and (111)cSrRuO3//(111)SrTiO3 substrates, respectively, by metalorganic chemical vapor deposition. Ferroelectric property with different magnitude was observed for (001)- and (118)-oriented films but for (104)-oriented film due to its large leakage current. The remanent polarization and the coercive field were 1.5 μC/cm2 and 15 kV/cm, 16.5 μC/cm2 and 132 kV/cm for the (001)- and (118)-oriented thin films, respectively. The spontaneous polarization (Ps) was 4.0 μC/cm2 and 27.0 μC/cm2 for (001)- and (118)-oriented films, respectively. This was different from the result of SrBi2Ta2O9 in that the ferroelectricity was not observed for (001)-oriented one, and was in good agreement with the estimation from the crystal structure. The estimated Ps values along the c and a axes of Bi4Ti3O12 were 4.0 and 48.4 μC/cm2, respectively, and agreed well with the reported values for the single crystal. Furthermore, both films showed good fatigue endurance after 7.8 × 1010 switching cycles measured with 500 kHz rectangular pulses.",

author = "Takayuki Watanabe and Hiroshi Funakubo and Keisuke Saito",

year = "2001",

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doi = "10.1557/JMR.2001.0046",

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T1 - Ferroelectric property of epitaxial Bi4Ti3O12 films prepared by metalorganic chemical vapor deposition

AU - Watanabe, Takayuki

AU - Funakubo, Hiroshi

AU - Saito, Keisuke

PY - 2001/1

Y1 - 2001/1

N2 - The orientation dependence of the ferroelectricity of epitaxially grown Bi4Ti3O12 thin films was investigated. The (001)-, (118)-, and (104)-oriented Bi4Ti3O12 films were epitaxially grown on (100)cCaRuO3//(100)SrTiO3, (110)cSrRuO3//(110)SrTiO3, and (111)cSrRuO3//(111)SrTiO3 substrates, respectively, by metalorganic chemical vapor deposition. Ferroelectric property with different magnitude was observed for (001)- and (118)-oriented films but for (104)-oriented film due to its large leakage current. The remanent polarization and the coercive field were 1.5 μC/cm2 and 15 kV/cm, 16.5 μC/cm2 and 132 kV/cm for the (001)- and (118)-oriented thin films, respectively. The spontaneous polarization (Ps) was 4.0 μC/cm2 and 27.0 μC/cm2 for (001)- and (118)-oriented films, respectively. This was different from the result of SrBi2Ta2O9 in that the ferroelectricity was not observed for (001)-oriented one, and was in good agreement with the estimation from the crystal structure. The estimated Ps values along the c and a axes of Bi4Ti3O12 were 4.0 and 48.4 μC/cm2, respectively, and agreed well with the reported values for the single crystal. Furthermore, both films showed good fatigue endurance after 7.8 × 1010 switching cycles measured with 500 kHz rectangular pulses.

AB - The orientation dependence of the ferroelectricity of epitaxially grown Bi4Ti3O12 thin films was investigated. The (001)-, (118)-, and (104)-oriented Bi4Ti3O12 films were epitaxially grown on (100)cCaRuO3//(100)SrTiO3, (110)cSrRuO3//(110)SrTiO3, and (111)cSrRuO3//(111)SrTiO3 substrates, respectively, by metalorganic chemical vapor deposition. Ferroelectric property with different magnitude was observed for (001)- and (118)-oriented films but for (104)-oriented film due to its large leakage current. The remanent polarization and the coercive field were 1.5 μC/cm2 and 15 kV/cm, 16.5 μC/cm2 and 132 kV/cm for the (001)- and (118)-oriented thin films, respectively. The spontaneous polarization (Ps) was 4.0 μC/cm2 and 27.0 μC/cm2 for (001)- and (118)-oriented films, respectively. This was different from the result of SrBi2Ta2O9 in that the ferroelectricity was not observed for (001)-oriented one, and was in good agreement with the estimation from the crystal structure. The estimated Ps values along the c and a axes of Bi4Ti3O12 were 4.0 and 48.4 μC/cm2, respectively, and agreed well with the reported values for the single crystal. Furthermore, both films showed good fatigue endurance after 7.8 × 1010 switching cycles measured with 500 kHz rectangular pulses.

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Ferroelectric property of epitaxial Bi₄Ti₃O₁₂ films prepared by metalorganic chemical vapor deposition

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