Ferroelectric self-field effect: implications for size effect and memory device

Yukio Watanabe; Akihiro Masuda

doi:10.1080/10584589908228455

Ferroelectric self-field effect: implications for size effect and memory device

Yukio Watanabe, Akihiro Masuda

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

Ideal ferroelectrics have mostly been modeled as insulators, i.e., infinite band gap materials, having a spontaneous polarization. Based on this assumption, theories for the finite size effect, the domain configuration, and the depolarization field instability have been proposed. However, most of oxide perovskite ferroelectrics have finite band gaps of 3 to 4 eV. We show that the inclusion of the finite band gap effect changes drastically conventional understanding of the finite size effect and others. The conclusions extracted from the present approach are consistent with recent experimental results. In particular, we discuss the stability of ferroelectric memory devices in detail.

Original language	English
Pages (from-to)	51-60
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	27
Issue number	1
DOIs	https://doi.org/10.1080/10584589908228455
Publication status	Published - 1999
Externally published	Yes
Event	The 11th International Symposium on Integrated Ferroelectrics (ISIF99) - Colorado Springs, CO, USA Duration: Mar 7 1999 → Mar 10 1999

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584589908228455

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title = "Ferroelectric self-field effect: implications for size effect and memory device",

abstract = "Ideal ferroelectrics have mostly been modeled as insulators, i.e., infinite band gap materials, having a spontaneous polarization. Based on this assumption, theories for the finite size effect, the domain configuration, and the depolarization field instability have been proposed. However, most of oxide perovskite ferroelectrics have finite band gaps of 3 to 4 eV. We show that the inclusion of the finite band gap effect changes drastically conventional understanding of the finite size effect and others. The conclusions extracted from the present approach are consistent with recent experimental results. In particular, we discuss the stability of ferroelectric memory devices in detail.",

author = "Yukio Watanabe and Akihiro Masuda",

year = "1999",

doi = "10.1080/10584589908228455",

language = "English",

volume = "27",

pages = "51--60",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1",

note = "The 11th International Symposium on Integrated Ferroelectrics (ISIF99) ; Conference date: 07-03-1999 Through 10-03-1999",

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TY - JOUR

T1 - Ferroelectric self-field effect

T2 - The 11th International Symposium on Integrated Ferroelectrics (ISIF99)

AU - Watanabe, Yukio

AU - Masuda, Akihiro

PY - 1999

Y1 - 1999

N2 - Ideal ferroelectrics have mostly been modeled as insulators, i.e., infinite band gap materials, having a spontaneous polarization. Based on this assumption, theories for the finite size effect, the domain configuration, and the depolarization field instability have been proposed. However, most of oxide perovskite ferroelectrics have finite band gaps of 3 to 4 eV. We show that the inclusion of the finite band gap effect changes drastically conventional understanding of the finite size effect and others. The conclusions extracted from the present approach are consistent with recent experimental results. In particular, we discuss the stability of ferroelectric memory devices in detail.

AB - Ideal ferroelectrics have mostly been modeled as insulators, i.e., infinite band gap materials, having a spontaneous polarization. Based on this assumption, theories for the finite size effect, the domain configuration, and the depolarization field instability have been proposed. However, most of oxide perovskite ferroelectrics have finite band gaps of 3 to 4 eV. We show that the inclusion of the finite band gap effect changes drastically conventional understanding of the finite size effect and others. The conclusions extracted from the present approach are consistent with recent experimental results. In particular, we discuss the stability of ferroelectric memory devices in detail.

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DO - 10.1080/10584589908228455

M3 - Conference article

AN - SCOPUS:0033314218

SN - 1058-4587

VL - 27

SP - 51

EP - 60

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1

Y2 - 7 March 1999 through 10 March 1999

ER -

Ferroelectric self-field effect: implications for size effect and memory device

Abstract

All Science Journal Classification (ASJC) codes

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