Ferroelectric self-field effect: implications for size effect and memory device

Yukio Watanabe, Akihiro Masuda

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


Ideal ferroelectrics have mostly been modeled as insulators, i.e., infinite band gap materials, having a spontaneous polarization. Based on this assumption, theories for the finite size effect, the domain configuration, and the depolarization field instability have been proposed. However, most of oxide perovskite ferroelectrics have finite band gaps of 3 to 4 eV. We show that the inclusion of the finite band gap effect changes drastically conventional understanding of the finite size effect and others. The conclusions extracted from the present approach are consistent with recent experimental results. In particular, we discuss the stability of ferroelectric memory devices in detail.

Original languageEnglish
Pages (from-to)51-60
Number of pages10
JournalIntegrated Ferroelectrics
Issue number1
Publication statusPublished - 1999
Externally publishedYes
EventThe 11th International Symposium on Integrated Ferroelectrics (ISIF99) - Colorado Springs, CO, USA
Duration: Mar 7 1999Mar 10 1999

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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