Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks

Tomonori Nishimura, Lun Xu, Shigehisa Shibayama, Takeaki Yajima, Shinji Migita, Akira Toriumi

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

We report on the impact of TiN interfaces on the ferroelectricity of nondoped HfO2. Ferroelectric properties of nondoped HfO2 in TiN/HfO2/TiN stacks are shown in capacitance-voltage and polarization-voltage characteristics. The Curie temperature is also estimated to be around 500 °C. The ferroelectricity of nondoped HfO2 clearly appears by thinning HfO2 film down to ∼35 nm. We directly revealed in thermal treatments that the ferroelectric HfO2 film on TiN was maintained by covering the top surface of HfO2 with TiN, while it was followed by a phase transition to the paraelectric phase in the case of the open surface of HfO2. Thus, it is concluded that the ferroelectricity in nondoped HfO2 in this study was mainly driven by both of top and bottom TiN interfaces.

Original languageEnglish
Article number08PB01
JournalJapanese journal of applied physics
Volume55
Issue number8S2
DOIs
Publication statusPublished - 2016
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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