Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks

Tomonori Nishimura; Lun Xu; Shigehisa Shibayama; Takeaki Yajima; Shinji Migita; Akira Toriumi

doi:10.7567/JJAP.55.08PB01

Ferroelectricity of nondoped thin HfO₂ films in TiN/HfO₂/TiN stacks

Tomonori Nishimura, Lun Xu, Shigehisa Shibayama, Takeaki Yajima, Shinji Migita, Akira Toriumi

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

We report on the impact of TiN interfaces on the ferroelectricity of nondoped HfO₂. Ferroelectric properties of nondoped HfO₂ in TiN/HfO₂/TiN stacks are shown in capacitance-voltage and polarization-voltage characteristics. The Curie temperature is also estimated to be around 500 °C. The ferroelectricity of nondoped HfO₂ clearly appears by thinning HfO₂ film down to ∼35 nm. We directly revealed in thermal treatments that the ferroelectric HfO₂ film on TiN was maintained by covering the top surface of HfO₂ with TiN, while it was followed by a phase transition to the paraelectric phase in the case of the open surface of HfO₂. Thus, it is concluded that the ferroelectricity in nondoped HfO₂ in this study was mainly driven by both of top and bottom TiN interfaces.

Original language	English
Article number	08PB01
Journal	Japanese journal of applied physics
Volume	55
Issue number	8S2
DOIs	https://doi.org/10.7567/JJAP.55.08PB01
Publication status	Published - 2016
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks",

abstract = "We report on the impact of TiN interfaces on the ferroelectricity of nondoped HfO2. Ferroelectric properties of nondoped HfO2 in TiN/HfO2/TiN stacks are shown in capacitance-voltage and polarization-voltage characteristics. The Curie temperature is also estimated to be around 500 °C. The ferroelectricity of nondoped HfO2 clearly appears by thinning HfO2 film down to ∼35 nm. We directly revealed in thermal treatments that the ferroelectric HfO2 film on TiN was maintained by covering the top surface of HfO2 with TiN, while it was followed by a phase transition to the paraelectric phase in the case of the open surface of HfO2. Thus, it is concluded that the ferroelectricity in nondoped HfO2 in this study was mainly driven by both of top and bottom TiN interfaces.",

author = "Tomonori Nishimura and Lun Xu and Shigehisa Shibayama and Takeaki Yajima and Shinji Migita and Akira Toriumi",

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doi = "10.7567/JJAP.55.08PB01",

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T1 - Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks

AU - Nishimura, Tomonori

AU - Xu, Lun

AU - Shibayama, Shigehisa

AU - Yajima, Takeaki

AU - Migita, Shinji

AU - Toriumi, Akira

PY - 2016

Y1 - 2016

N2 - We report on the impact of TiN interfaces on the ferroelectricity of nondoped HfO2. Ferroelectric properties of nondoped HfO2 in TiN/HfO2/TiN stacks are shown in capacitance-voltage and polarization-voltage characteristics. The Curie temperature is also estimated to be around 500 °C. The ferroelectricity of nondoped HfO2 clearly appears by thinning HfO2 film down to ∼35 nm. We directly revealed in thermal treatments that the ferroelectric HfO2 film on TiN was maintained by covering the top surface of HfO2 with TiN, while it was followed by a phase transition to the paraelectric phase in the case of the open surface of HfO2. Thus, it is concluded that the ferroelectricity in nondoped HfO2 in this study was mainly driven by both of top and bottom TiN interfaces.

AB - We report on the impact of TiN interfaces on the ferroelectricity of nondoped HfO2. Ferroelectric properties of nondoped HfO2 in TiN/HfO2/TiN stacks are shown in capacitance-voltage and polarization-voltage characteristics. The Curie temperature is also estimated to be around 500 °C. The ferroelectricity of nondoped HfO2 clearly appears by thinning HfO2 film down to ∼35 nm. We directly revealed in thermal treatments that the ferroelectric HfO2 film on TiN was maintained by covering the top surface of HfO2 with TiN, while it was followed by a phase transition to the paraelectric phase in the case of the open surface of HfO2. Thus, it is concluded that the ferroelectricity in nondoped HfO2 in this study was mainly driven by both of top and bottom TiN interfaces.

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Ferroelectricity of nondoped thin HfO₂ films in TiN/HfO₂/TiN stacks

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