Ferromagnetic iron silicide thin films prepared by pulsed-laser deposition

Tsuyoshi Yoshitake; Dai Nakagauchi; Kunihito Nagayama

Ferromagnetic iron silicide thin films prepared by pulsed-laser deposition

Tsuyoshi Yoshitake, Dai Nakagauchi, Kunihito Nagayama

Research output: Contribution to journal › Letter › peer-review

Abstract

The Fe-Si system has both semiconducting phases, such as β-FeSi₂, amorphous FeSi₂ and FeSi, and the ferromagnetic phase of Fe₃Si. In order to fabricate a heterostructural thin film consisting of semiconductor and ferromagnetic metal of a Fe-Si system, it is indispensable for the ferromagnetic Fe₃Si thin film to be grown at a low substrate temperature. In this work, we studied the growth of Fe₃Si thin film by pulsed-laser deposition, and found that the single-phase Fe₃Si thin film and ferromagnetic amorphous-like thin film were grown at substrate temperatures of 300°C and room temperature, respectively.

Original language	English
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	42
Issue number	7 B
Publication status	Published - Jul 15 2003

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

Cite this

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title = "Ferromagnetic iron silicide thin films prepared by pulsed-laser deposition",

abstract = "The Fe-Si system has both semiconducting phases, such as β-FeSi2, amorphous FeSi2 and FeSi, and the ferromagnetic phase of Fe3Si. In order to fabricate a heterostructural thin film consisting of semiconductor and ferromagnetic metal of a Fe-Si system, it is indispensable for the ferromagnetic Fe3Si thin film to be grown at a low substrate temperature. In this work, we studied the growth of Fe3Si thin film by pulsed-laser deposition, and found that the single-phase Fe3Si thin film and ferromagnetic amorphous-like thin film were grown at substrate temperatures of 300°C and room temperature, respectively.",

author = "Tsuyoshi Yoshitake and Dai Nakagauchi and Kunihito Nagayama",

year = "2003",

month = jul,

day = "15",

language = "English",

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journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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T1 - Ferromagnetic iron silicide thin films prepared by pulsed-laser deposition

AU - Yoshitake, Tsuyoshi

AU - Nakagauchi, Dai

AU - Nagayama, Kunihito

PY - 2003/7/15

Y1 - 2003/7/15

N2 - The Fe-Si system has both semiconducting phases, such as β-FeSi2, amorphous FeSi2 and FeSi, and the ferromagnetic phase of Fe3Si. In order to fabricate a heterostructural thin film consisting of semiconductor and ferromagnetic metal of a Fe-Si system, it is indispensable for the ferromagnetic Fe3Si thin film to be grown at a low substrate temperature. In this work, we studied the growth of Fe3Si thin film by pulsed-laser deposition, and found that the single-phase Fe3Si thin film and ferromagnetic amorphous-like thin film were grown at substrate temperatures of 300°C and room temperature, respectively.

AB - The Fe-Si system has both semiconducting phases, such as β-FeSi2, amorphous FeSi2 and FeSi, and the ferromagnetic phase of Fe3Si. In order to fabricate a heterostructural thin film consisting of semiconductor and ferromagnetic metal of a Fe-Si system, it is indispensable for the ferromagnetic Fe3Si thin film to be grown at a low substrate temperature. In this work, we studied the growth of Fe3Si thin film by pulsed-laser deposition, and found that the single-phase Fe3Si thin film and ferromagnetic amorphous-like thin film were grown at substrate temperatures of 300°C and room temperature, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0141495050&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141495050&partnerID=8YFLogxK

M3 - Letter

AN - SCOPUS:0141495050

VL - 42

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

SN - 0021-4922

IS - 7 B

ER -

Ferromagnetic iron silicide thin films prepared by pulsed-laser deposition

Abstract

All Science Journal Classification (ASJC) codes

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