Ferromagnetic iron silicide thin films prepared by pulsed-laser deposition

Tsuyoshi Yoshitake, Dai Nakagauchi, Kunihito Nagayama

    Research output: Contribution to journalLetter

    20 Citations (Scopus)

    Abstract

    The Fe-Si system has both semiconducting phases, such as β-FeSi2, amorphous FeSi2 and FeSi, and the ferromagnetic phase of Fe3Si. In order to fabricate a heterostructural thin film consisting of semiconductor and ferromagnetic metal of a Fe-Si system, it is indispensable for the ferromagnetic Fe3Si thin film to be grown at a low substrate temperature. In this work, we studied the growth of Fe3Si thin film by pulsed-laser deposition, and found that the single-phase Fe3Si thin film and ferromagnetic amorphous-like thin film were grown at substrate temperatures of 300°C and room temperature, respectively.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume42
    Issue number7 B
    Publication statusPublished - Jul 15 2003

    Fingerprint

    Pulsed laser deposition
    pulsed laser deposition
    Iron
    iron
    Thin films
    thin films
    Ferromagnetic materials
    Substrates
    Temperature
    temperature
    Semiconductor materials
    room temperature
    metals

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

    Cite this

    Ferromagnetic iron silicide thin films prepared by pulsed-laser deposition. / Yoshitake, Tsuyoshi; Nakagauchi, Dai; Nagayama, Kunihito.

    In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 7 B, 15.07.2003.

    Research output: Contribution to journalLetter

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    AU - Yoshitake, Tsuyoshi

    AU - Nakagauchi, Dai

    AU - Nagayama, Kunihito

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    Y1 - 2003/7/15

    N2 - The Fe-Si system has both semiconducting phases, such as β-FeSi2, amorphous FeSi2 and FeSi, and the ferromagnetic phase of Fe3Si. In order to fabricate a heterostructural thin film consisting of semiconductor and ferromagnetic metal of a Fe-Si system, it is indispensable for the ferromagnetic Fe3Si thin film to be grown at a low substrate temperature. In this work, we studied the growth of Fe3Si thin film by pulsed-laser deposition, and found that the single-phase Fe3Si thin film and ferromagnetic amorphous-like thin film were grown at substrate temperatures of 300°C and room temperature, respectively.

    AB - The Fe-Si system has both semiconducting phases, such as β-FeSi2, amorphous FeSi2 and FeSi, and the ferromagnetic phase of Fe3Si. In order to fabricate a heterostructural thin film consisting of semiconductor and ferromagnetic metal of a Fe-Si system, it is indispensable for the ferromagnetic Fe3Si thin film to be grown at a low substrate temperature. In this work, we studied the growth of Fe3Si thin film by pulsed-laser deposition, and found that the single-phase Fe3Si thin film and ferromagnetic amorphous-like thin film were grown at substrate temperatures of 300°C and room temperature, respectively.

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    JO - Japanese Journal of Applied Physics, Part 2: Letters

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