Abstract
The Fe-Si system has both semiconducting phases, such as β-FeSi2, amorphous FeSi2 and FeSi, and the ferromagnetic phase of Fe3Si. In order to fabricate a heterostructural thin film consisting of semiconductor and ferromagnetic metal of a Fe-Si system, it is indispensable for the ferromagnetic Fe3Si thin film to be grown at a low substrate temperature. In this work, we studied the growth of Fe3Si thin film by pulsed-laser deposition, and found that the single-phase Fe3Si thin film and ferromagnetic amorphous-like thin film were grown at substrate temperatures of 300°C and room temperature, respectively.
Original language | English |
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Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 42 |
Issue number | 7 B |
Publication status | Published - Jul 15 2003 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)