The Fe-Si system has both semiconducting phases, such as β-FeSi2, amorphous FeSi2 and FeSi, and the ferromagnetic phase of Fe3Si. In order to fabricate a heterostructural thin film consisting of semiconductor and ferromagnetic metal of a Fe-Si system, it is indispensable for the ferromagnetic Fe3Si thin film to be grown at a low substrate temperature. In this work, we studied the growth of Fe3Si thin film by pulsed-laser deposition, and found that the single-phase Fe3Si thin film and ferromagnetic amorphous-like thin film were grown at substrate temperatures of 300°C and room temperature, respectively.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||7 B|
|Publication status||Published - Jul 15 2003|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)