Ferromagnetic iron silicide thin films prepared by pulsed-laser deposition

Tsuyoshi Yoshitake, Dai Nakagauchi, Kunihito Nagayama

    Research output: Contribution to journalLetter

    20 Citations (Scopus)

    Abstract

    The Fe-Si system has both semiconducting phases, such as β-FeSi2, amorphous FeSi2 and FeSi, and the ferromagnetic phase of Fe3Si. In order to fabricate a heterostructural thin film consisting of semiconductor and ferromagnetic metal of a Fe-Si system, it is indispensable for the ferromagnetic Fe3Si thin film to be grown at a low substrate temperature. In this work, we studied the growth of Fe3Si thin film by pulsed-laser deposition, and found that the single-phase Fe3Si thin film and ferromagnetic amorphous-like thin film were grown at substrate temperatures of 300°C and room temperature, respectively.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume42
    Issue number7 B
    Publication statusPublished - Jul 15 2003

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

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