Ferromagnetism and electronic structures of nonstoichiometric Heusler-alloy Fe3-xMnxSi epilayers grown on Ge(111)

K. Hamaya, H. Itoh, O. Nakatsuka, K. Ueda, Keisuke Yamamoto, Masaru Itakura, T. Taniyama, T. Ono, M. Miyao

Research output: Contribution to journalArticle

93 Citations (Scopus)

Abstract

For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloy Fe3-xMnxSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L21-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe3-xMnxSi alloys become half-metallic for 0.75≤x≤1.5. We discuss the possibility of room-temperature ferromagnetic Fe3-xMnxSi/Ge epilayers with high spin polarization.

Original languageEnglish
Article number137204
JournalPhysical Review Letters
Volume102
Issue number13
DOIs
Publication statusPublished - Mar 30 2009

Fingerprint

ferromagnetism
electronic structure
ferromagnetic materials
Curie temperature
tuning
room temperature
polarization

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Ferromagnetism and electronic structures of nonstoichiometric Heusler-alloy Fe3-xMnxSi epilayers grown on Ge(111). / Hamaya, K.; Itoh, H.; Nakatsuka, O.; Ueda, K.; Yamamoto, Keisuke; Itakura, Masaru; Taniyama, T.; Ono, T.; Miyao, M.

In: Physical Review Letters, Vol. 102, No. 13, 137204, 30.03.2009.

Research output: Contribution to journalArticle

Hamaya, K. ; Itoh, H. ; Nakatsuka, O. ; Ueda, K. ; Yamamoto, Keisuke ; Itakura, Masaru ; Taniyama, T. ; Ono, T. ; Miyao, M. / Ferromagnetism and electronic structures of nonstoichiometric Heusler-alloy Fe3-xMnxSi epilayers grown on Ge(111). In: Physical Review Letters. 2009 ; Vol. 102, No. 13.
@article{4be6d20838c44fcf9d60044411daa82e,
title = "Ferromagnetism and electronic structures of nonstoichiometric Heusler-alloy Fe3-xMnxSi epilayers grown on Ge(111)",
abstract = "For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloy Fe3-xMnxSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L21-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe3-xMnxSi alloys become half-metallic for 0.75≤x≤1.5. We discuss the possibility of room-temperature ferromagnetic Fe3-xMnxSi/Ge epilayers with high spin polarization.",
author = "K. Hamaya and H. Itoh and O. Nakatsuka and K. Ueda and Keisuke Yamamoto and Masaru Itakura and T. Taniyama and T. Ono and M. Miyao",
year = "2009",
month = "3",
day = "30",
doi = "10.1103/PhysRevLett.102.137204",
language = "English",
volume = "102",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "13",

}

TY - JOUR

T1 - Ferromagnetism and electronic structures of nonstoichiometric Heusler-alloy Fe3-xMnxSi epilayers grown on Ge(111)

AU - Hamaya, K.

AU - Itoh, H.

AU - Nakatsuka, O.

AU - Ueda, K.

AU - Yamamoto, Keisuke

AU - Itakura, Masaru

AU - Taniyama, T.

AU - Ono, T.

AU - Miyao, M.

PY - 2009/3/30

Y1 - 2009/3/30

N2 - For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloy Fe3-xMnxSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L21-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe3-xMnxSi alloys become half-metallic for 0.75≤x≤1.5. We discuss the possibility of room-temperature ferromagnetic Fe3-xMnxSi/Ge epilayers with high spin polarization.

AB - For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloy Fe3-xMnxSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L21-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe3-xMnxSi alloys become half-metallic for 0.75≤x≤1.5. We discuss the possibility of room-temperature ferromagnetic Fe3-xMnxSi/Ge epilayers with high spin polarization.

UR - http://www.scopus.com/inward/record.url?scp=64649105335&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=64649105335&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.102.137204

DO - 10.1103/PhysRevLett.102.137204

M3 - Article

AN - SCOPUS:64649105335

VL - 102

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 13

M1 - 137204

ER -