Few-layer epitaxial graphene grown on vicinal 6H-SiC studied by deep ultraviolet Raman spectroscopy

Kenji Kisoda, Susumu Kamoi, Noriyuki Hasuike, Hiroshi Harima, Kouhei Morita, Satoru Tanaka, Akihiro Hashimoto

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18 Citations (Scopus)

Abstract

Few layer epitaxial graphenes (1.8-3.0 layers) grown on vicinal 6H-SiC (0001) were characterized by deep ultraviolet Raman spectroscopy. Shallow penetration depth of the probe laser enabled us to observe G-peak of graphene without subtraction of the SiC substrate signal from observed spectra. The G-peak was greatly shifted to higher frequency compared to that of graphite due to in-plane compressive stress deriving from the substrate. The frequency shift decreased with the number of graphene layers because of stress relaxation from layer to layer. Our experiment suggests that the stress is completely relaxed within five to six graphene layers.

Original languageEnglish
Article number033108
JournalApplied Physics Letters
Volume97
Issue number3
DOIs
Publication statusPublished - Jul 19 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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