Field-access scheme of bloch line memory

H. Asada, M. Shigenobu, Kazuo Nakamura, N. Yoshimatsu, S. Konishi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The Bloch line propagation under bias pulsed fields has been studied by using the computer-simulation. Stripe domain walls were stabilized around 100 % grooved regions. A potential well to define the bit position was generated by a stray field from very thin high coercive-force films. The pulsed field amplitude of several 0e and several tens Oe are required for propagating VBL pairs in 5 µm and.5 µm bubble-garnet films, respectively. A larger damping parameter and a smaller gyromagnetic constant than the usual bubble garnet film are desirable for reliable propagation. Magnetic and electric circuits are proposed to supply fast-rise and slow-fall bias pulsed fields.

Original languageEnglish
Pages (from-to)2326-2328
Number of pages3
JournalIEEE Transactions on Magnetics
Volume23
Issue number5
DOIs
Publication statusPublished - Jan 1 1987

Fingerprint

Garnets
Data storage equipment
Magnetic circuits
Domain walls
Coercive force
Damping
Networks (circuits)
Computer simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Asada, H., Shigenobu, M., Nakamura, K., Yoshimatsu, N., & Konishi, S. (1987). Field-access scheme of bloch line memory. IEEE Transactions on Magnetics, 23(5), 2326-2328. https://doi.org/10.1109/TMAG.1987.1065765

Field-access scheme of bloch line memory. / Asada, H.; Shigenobu, M.; Nakamura, Kazuo; Yoshimatsu, N.; Konishi, S.

In: IEEE Transactions on Magnetics, Vol. 23, No. 5, 01.01.1987, p. 2326-2328.

Research output: Contribution to journalArticle

Asada, H, Shigenobu, M, Nakamura, K, Yoshimatsu, N & Konishi, S 1987, 'Field-access scheme of bloch line memory', IEEE Transactions on Magnetics, vol. 23, no. 5, pp. 2326-2328. https://doi.org/10.1109/TMAG.1987.1065765
Asada H, Shigenobu M, Nakamura K, Yoshimatsu N, Konishi S. Field-access scheme of bloch line memory. IEEE Transactions on Magnetics. 1987 Jan 1;23(5):2326-2328. https://doi.org/10.1109/TMAG.1987.1065765
Asada, H. ; Shigenobu, M. ; Nakamura, Kazuo ; Yoshimatsu, N. ; Konishi, S. / Field-access scheme of bloch line memory. In: IEEE Transactions on Magnetics. 1987 ; Vol. 23, No. 5. pp. 2326-2328.
@article{32e4aae05ac3449e95e754ad2f514cd3,
title = "Field-access scheme of bloch line memory",
abstract = "The Bloch line propagation under bias pulsed fields has been studied by using the computer-simulation. Stripe domain walls were stabilized around 100 {\%} grooved regions. A potential well to define the bit position was generated by a stray field from very thin high coercive-force films. The pulsed field amplitude of several 0e and several tens Oe are required for propagating VBL pairs in 5 µm and.5 µm bubble-garnet films, respectively. A larger damping parameter and a smaller gyromagnetic constant than the usual bubble garnet film are desirable for reliable propagation. Magnetic and electric circuits are proposed to supply fast-rise and slow-fall bias pulsed fields.",
author = "H. Asada and M. Shigenobu and Kazuo Nakamura and N. Yoshimatsu and S. Konishi",
year = "1987",
month = "1",
day = "1",
doi = "10.1109/TMAG.1987.1065765",
language = "English",
volume = "23",
pages = "2326--2328",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

TY - JOUR

T1 - Field-access scheme of bloch line memory

AU - Asada, H.

AU - Shigenobu, M.

AU - Nakamura, Kazuo

AU - Yoshimatsu, N.

AU - Konishi, S.

PY - 1987/1/1

Y1 - 1987/1/1

N2 - The Bloch line propagation under bias pulsed fields has been studied by using the computer-simulation. Stripe domain walls were stabilized around 100 % grooved regions. A potential well to define the bit position was generated by a stray field from very thin high coercive-force films. The pulsed field amplitude of several 0e and several tens Oe are required for propagating VBL pairs in 5 µm and.5 µm bubble-garnet films, respectively. A larger damping parameter and a smaller gyromagnetic constant than the usual bubble garnet film are desirable for reliable propagation. Magnetic and electric circuits are proposed to supply fast-rise and slow-fall bias pulsed fields.

AB - The Bloch line propagation under bias pulsed fields has been studied by using the computer-simulation. Stripe domain walls were stabilized around 100 % grooved regions. A potential well to define the bit position was generated by a stray field from very thin high coercive-force films. The pulsed field amplitude of several 0e and several tens Oe are required for propagating VBL pairs in 5 µm and.5 µm bubble-garnet films, respectively. A larger damping parameter and a smaller gyromagnetic constant than the usual bubble garnet film are desirable for reliable propagation. Magnetic and electric circuits are proposed to supply fast-rise and slow-fall bias pulsed fields.

UR - http://www.scopus.com/inward/record.url?scp=0023417078&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023417078&partnerID=8YFLogxK

U2 - 10.1109/TMAG.1987.1065765

DO - 10.1109/TMAG.1987.1065765

M3 - Article

VL - 23

SP - 2326

EP - 2328

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 5

ER -