Field-access scheme of bloch line memory

H. Asada, M. Shigenobu, K. Nakamura, N. Yoshimatsu, S. Konishi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The Bloch line propagation under bias pulsed fields has been studied by using the computer-simulation. Stripe domain walls were stabilized around 100 % grooved regions. A potential well to define the bit position was generated by a stray field from very thin high coercive-force films. The pulsed field amplitude of several 0e and several tens Oe are required for propagating VBL pairs in 5 µm and.5 µm bubble-garnet films, respectively. A larger damping parameter and a smaller gyromagnetic constant than the usual bubble garnet film are desirable for reliable propagation. Magnetic and electric circuits are proposed to supply fast-rise and slow-fall bias pulsed fields.

Original languageEnglish
Pages (from-to)2326-2328
Number of pages3
JournalIEEE Transactions on Magnetics
Volume23
Issue number5
DOIs
Publication statusPublished - Sep 1987

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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