Field-assisted oxygen etching for sharp field-emission tip

Faridur Rahman, Jo Onoda, Koji Imaizumi, Seigi Mizuno

    Research output: Contribution to journalArticle

    30 Citations (Scopus)

    Abstract

    A simple and repeatable modification technique for single-crystal tungsten 〈1 1 1〉 oriented tips is reported. The modification technique was based on field-assisted oxygen etching of the peripheral tungsten atoms of the tip apex. Field-ion microscopy (FIM) was used to etch and to visualize the real-time etching events, and field emission patterns were observed at the same geometry. During modification via controlled etching of the tungsten tip, the FIM bias typically decreased from 4.4 kV to 1.6 kV. This bias change corresponded to a reduction of the radius of curvature from 10 nm to 3 nm. The sharpened tips emitted electrons at low- or extremely low-bias voltages with good geometrical confinement. The shape of the etched tip and the features of field emission were evaluated by field evaporation and Fowler-Nordheim plots.

    Original languageEnglish
    Pages (from-to)2128-2134
    Number of pages7
    JournalSurface Science
    Volume602
    Issue number12
    DOIs
    Publication statusPublished - Jun 15 2008

    All Science Journal Classification (ASJC) codes

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Materials Chemistry

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