Field-effect transistors with vacuum-deposited organic-inorganic perovskite films as semiconductor channels

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Abstract

Films of the organic-inorganic layered perovskite (C6H5C2H4NH3)2SnI4 were vacuum-deposited on substrates heated at various temperatures (Tsub) to investigate the influence of Tsub on their film quality and transistor performance (hole mobilities, threshold voltages, and current on/off ratios). Appropriate substrate heating at Tsub = 60 °C during vacuum deposition led to better-developed perovskite films with larger grains. These films exhibited the best transistor performance in comparison with films fabricated at the other Tsub. The transistor performance was further enhanced by reducing perovskite semiconductor thickness (t) because of a reduction of bulk resistance in a top-contact/bottom-gate transistor structure. By utilizing the optimized Tsub of 60 °C and t of 31 nm, we obtained the most improved hole mobility of 0.78 ± 0.24 cm2/V s, about 5000 times the hole mobilities of our initial transistors fabricated at Tsub = 24 °C and t = 50 nm.

Original languageEnglish
Article number233301
JournalJournal of Applied Physics
Volume120
Issue number23
DOIs
Publication statusPublished - Dec 21 2016

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transistors
field effect transistors
hole mobility
vacuum
vacuum deposition
threshold currents
threshold voltage
heating
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Field-effect transistors with vacuum-deposited organic-inorganic perovskite films as semiconductor channels",
abstract = "Films of the organic-inorganic layered perovskite (C6H5C2H4NH3)2SnI4 were vacuum-deposited on substrates heated at various temperatures (Tsub) to investigate the influence of Tsub on their film quality and transistor performance (hole mobilities, threshold voltages, and current on/off ratios). Appropriate substrate heating at Tsub = 60 °C during vacuum deposition led to better-developed perovskite films with larger grains. These films exhibited the best transistor performance in comparison with films fabricated at the other Tsub. The transistor performance was further enhanced by reducing perovskite semiconductor thickness (t) because of a reduction of bulk resistance in a top-contact/bottom-gate transistor structure. By utilizing the optimized Tsub of 60 °C and t of 31 nm, we obtained the most improved hole mobility of 0.78 ± 0.24 cm2/V s, about 5000 times the hole mobilities of our initial transistors fabricated at Tsub = 24 °C and t = 50 nm.",
author = "Toshinori Matsusima and Takeshi Yasuda and Katsuhiko Fujita and Chihaya Adachi",
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T1 - Field-effect transistors with vacuum-deposited organic-inorganic perovskite films as semiconductor channels

AU - Matsusima, Toshinori

AU - Yasuda, Takeshi

AU - Fujita, Katsuhiko

AU - Adachi, Chihaya

PY - 2016/12/21

Y1 - 2016/12/21

N2 - Films of the organic-inorganic layered perovskite (C6H5C2H4NH3)2SnI4 were vacuum-deposited on substrates heated at various temperatures (Tsub) to investigate the influence of Tsub on their film quality and transistor performance (hole mobilities, threshold voltages, and current on/off ratios). Appropriate substrate heating at Tsub = 60 °C during vacuum deposition led to better-developed perovskite films with larger grains. These films exhibited the best transistor performance in comparison with films fabricated at the other Tsub. The transistor performance was further enhanced by reducing perovskite semiconductor thickness (t) because of a reduction of bulk resistance in a top-contact/bottom-gate transistor structure. By utilizing the optimized Tsub of 60 °C and t of 31 nm, we obtained the most improved hole mobility of 0.78 ± 0.24 cm2/V s, about 5000 times the hole mobilities of our initial transistors fabricated at Tsub = 24 °C and t = 50 nm.

AB - Films of the organic-inorganic layered perovskite (C6H5C2H4NH3)2SnI4 were vacuum-deposited on substrates heated at various temperatures (Tsub) to investigate the influence of Tsub on their film quality and transistor performance (hole mobilities, threshold voltages, and current on/off ratios). Appropriate substrate heating at Tsub = 60 °C during vacuum deposition led to better-developed perovskite films with larger grains. These films exhibited the best transistor performance in comparison with films fabricated at the other Tsub. The transistor performance was further enhanced by reducing perovskite semiconductor thickness (t) because of a reduction of bulk resistance in a top-contact/bottom-gate transistor structure. By utilizing the optimized Tsub of 60 °C and t of 31 nm, we obtained the most improved hole mobility of 0.78 ± 0.24 cm2/V s, about 5000 times the hole mobilities of our initial transistors fabricated at Tsub = 24 °C and t = 50 nm.

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