Abstract
Films of the organic-inorganic layered perovskite (C6H5C2H4NH3)2SnI4 were vacuum-deposited on substrates heated at various temperatures (Tsub) to investigate the influence of Tsub on their film quality and transistor performance (hole mobilities, threshold voltages, and current on/off ratios). Appropriate substrate heating at Tsub = 60 °C during vacuum deposition led to better-developed perovskite films with larger grains. These films exhibited the best transistor performance in comparison with films fabricated at the other Tsub. The transistor performance was further enhanced by reducing perovskite semiconductor thickness (t) because of a reduction of bulk resistance in a top-contact/bottom-gate transistor structure. By utilizing the optimized Tsub of 60 °C and t of 31 nm, we obtained the most improved hole mobility of 0.78 ± 0.24 cm2/V s, about 5000 times the hole mobilities of our initial transistors fabricated at Tsub = 24 °C and t = 50 nm.
| Original language | English |
|---|---|
| Article number | 233301 |
| Journal | Journal of Applied Physics |
| Volume | 120 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - Dec 21 2016 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
Field-effect transistors with vacuum-deposited organic-inorganic perovskite films as semiconductor channels. / Matsusima, Toshinori; Yasuda, Takeshi; Fujita, Katsuhiko; Adachi, Chihaya.
In: Journal of Applied Physics, Vol. 120, No. 23, 233301, 21.12.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Field-effect transistors with vacuum-deposited organic-inorganic perovskite films as semiconductor channels
AU - Matsusima, Toshinori
AU - Yasuda, Takeshi
AU - Fujita, Katsuhiko
AU - Adachi, Chihaya
PY - 2016/12/21
Y1 - 2016/12/21
N2 - Films of the organic-inorganic layered perovskite (C6H5C2H4NH3)2SnI4 were vacuum-deposited on substrates heated at various temperatures (Tsub) to investigate the influence of Tsub on their film quality and transistor performance (hole mobilities, threshold voltages, and current on/off ratios). Appropriate substrate heating at Tsub = 60 °C during vacuum deposition led to better-developed perovskite films with larger grains. These films exhibited the best transistor performance in comparison with films fabricated at the other Tsub. The transistor performance was further enhanced by reducing perovskite semiconductor thickness (t) because of a reduction of bulk resistance in a top-contact/bottom-gate transistor structure. By utilizing the optimized Tsub of 60 °C and t of 31 nm, we obtained the most improved hole mobility of 0.78 ± 0.24 cm2/V s, about 5000 times the hole mobilities of our initial transistors fabricated at Tsub = 24 °C and t = 50 nm.
AB - Films of the organic-inorganic layered perovskite (C6H5C2H4NH3)2SnI4 were vacuum-deposited on substrates heated at various temperatures (Tsub) to investigate the influence of Tsub on their film quality and transistor performance (hole mobilities, threshold voltages, and current on/off ratios). Appropriate substrate heating at Tsub = 60 °C during vacuum deposition led to better-developed perovskite films with larger grains. These films exhibited the best transistor performance in comparison with films fabricated at the other Tsub. The transistor performance was further enhanced by reducing perovskite semiconductor thickness (t) because of a reduction of bulk resistance in a top-contact/bottom-gate transistor structure. By utilizing the optimized Tsub of 60 °C and t of 31 nm, we obtained the most improved hole mobility of 0.78 ± 0.24 cm2/V s, about 5000 times the hole mobilities of our initial transistors fabricated at Tsub = 24 °C and t = 50 nm.
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U2 - 10.1063/1.4972226
DO - 10.1063/1.4972226
M3 - Article
VL - 120
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 23
M1 - 233301
ER -