Field emission from an ion-beam-modified polyimide film

Akiyoshi Baba, Katsuya Higa, Tanemasa Asano

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We demonstrate the field emission of electrons from an ion-beam-modified polyimide material. A 25-μ-thick polyimide sheet is used as the starting material. The electrical resistivity of this polyimide film is found to abruptly decrease after Ar ion irradiation at doses higher than 5×1015 cm-2. To prepare a field emitter array, a pyramid-like structure is fabricated directly on the polyimide sheet using oxygen-plasma etching, and Ar ions are subsequently irradiated. An emission current of the order μA is observed at relatively low electric fields for the irradiated samples, while no emission is detected from unirradiated samples. An emission current stability of 1.9±0.3 μA is observed. The current-voltage characteristics of the polyimide field emitters are compared with those of a field emitter made from a photoresist.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number3 A
Publication statusPublished - Jan 1 1999
Externally publishedYes

Fingerprint

polyimides
Polyimides
Field emission
Ion beams
field emission
ion beams
emitters
Plasma etching
oxygen plasma
plasma etching
Photoresists
Current voltage characteristics
Ion bombardment
pyramids
ion irradiation
photoresists
Dosimetry
Electric fields
dosage
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Field emission from an ion-beam-modified polyimide film. / Baba, Akiyoshi; Higa, Katsuya; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 38, No. 3 A, 01.01.1999.

Research output: Contribution to journalArticle

Baba, Akiyoshi ; Higa, Katsuya ; Asano, Tanemasa. / Field emission from an ion-beam-modified polyimide film. In: Japanese Journal of Applied Physics, Part 2: Letters. 1999 ; Vol. 38, No. 3 A.
@article{9367209ac0994961bc4b6323eb9b7d2e,
title = "Field emission from an ion-beam-modified polyimide film",
abstract = "We demonstrate the field emission of electrons from an ion-beam-modified polyimide material. A 25-μ-thick polyimide sheet is used as the starting material. The electrical resistivity of this polyimide film is found to abruptly decrease after Ar ion irradiation at doses higher than 5×1015 cm-2. To prepare a field emitter array, a pyramid-like structure is fabricated directly on the polyimide sheet using oxygen-plasma etching, and Ar ions are subsequently irradiated. An emission current of the order μA is observed at relatively low electric fields for the irradiated samples, while no emission is detected from unirradiated samples. An emission current stability of 1.9±0.3 μA is observed. The current-voltage characteristics of the polyimide field emitters are compared with those of a field emitter made from a photoresist.",
author = "Akiyoshi Baba and Katsuya Higa and Tanemasa Asano",
year = "1999",
month = "1",
day = "1",
language = "English",
volume = "38",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "3 A",

}

TY - JOUR

T1 - Field emission from an ion-beam-modified polyimide film

AU - Baba, Akiyoshi

AU - Higa, Katsuya

AU - Asano, Tanemasa

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We demonstrate the field emission of electrons from an ion-beam-modified polyimide material. A 25-μ-thick polyimide sheet is used as the starting material. The electrical resistivity of this polyimide film is found to abruptly decrease after Ar ion irradiation at doses higher than 5×1015 cm-2. To prepare a field emitter array, a pyramid-like structure is fabricated directly on the polyimide sheet using oxygen-plasma etching, and Ar ions are subsequently irradiated. An emission current of the order μA is observed at relatively low electric fields for the irradiated samples, while no emission is detected from unirradiated samples. An emission current stability of 1.9±0.3 μA is observed. The current-voltage characteristics of the polyimide field emitters are compared with those of a field emitter made from a photoresist.

AB - We demonstrate the field emission of electrons from an ion-beam-modified polyimide material. A 25-μ-thick polyimide sheet is used as the starting material. The electrical resistivity of this polyimide film is found to abruptly decrease after Ar ion irradiation at doses higher than 5×1015 cm-2. To prepare a field emitter array, a pyramid-like structure is fabricated directly on the polyimide sheet using oxygen-plasma etching, and Ar ions are subsequently irradiated. An emission current of the order μA is observed at relatively low electric fields for the irradiated samples, while no emission is detected from unirradiated samples. An emission current stability of 1.9±0.3 μA is observed. The current-voltage characteristics of the polyimide field emitters are compared with those of a field emitter made from a photoresist.

UR - http://www.scopus.com/inward/record.url?scp=0032636905&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032636905&partnerID=8YFLogxK

M3 - Article

VL - 38

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 A

ER -