We demonstrate the field emission of electrons from an ion-beam-modified polyimide material. A 25-μ-thick polyimide sheet is used as the starting material. The electrical resistivity of this polyimide film is found to abruptly decrease after Ar ion irradiation at doses higher than 5×1015 cm-2. To prepare a field emitter array, a pyramid-like structure is fabricated directly on the polyimide sheet using oxygen-plasma etching, and Ar ions are subsequently irradiated. An emission current of the order μA is observed at relatively low electric fields for the irradiated samples, while no emission is detected from unirradiated samples. An emission current stability of 1.9±0.3 μA is observed. The current-voltage characteristics of the polyimide field emitters are compared with those of a field emitter made from a photoresist.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||3 A|
|Publication status||Published - Jan 1 1999|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)