Field emission from an ion irradiated photoresist

Tanemasa Asano, Eiji Shibata, Daisuke Sasaguri, Kenji Makihira, Katsuya Higa

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Abstract

The field emission from Ar ion irradiated photoresist material is demonstrated. A photoresist of novolac-type positive-tone is used as the test material. The electrical resistivity of the photoresist film is found to decrease after Ar ion implantation at doses on the order of 1016 cm-2. Raman spectroscopy shows that carbon-carbon bonds such as the graphite bond are produced due to ion bombardment. For the field emission, a pyramid-like structure is prepared using oxygen-plasma etching and Ar ions are implanted to the pyramid-like structured photoresist. Electron emission of the order of 10-6 A is observed for implanted samples, while no emission is detected from unimplanted samples.

Original languageEnglish
Pages (from-to)L818-L820
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number6
DOIs
Publication statusPublished - 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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    Asano, T., Shibata, E., Sasaguri, D., Makihira, K., & Higa, K. (1997). Field emission from an ion irradiated photoresist. Japanese Journal of Applied Physics, Part 2: Letters, 36(6), L818-L820. https://doi.org/10.1143/jjap.36.l818