Field emission from W tips sharpened by field-assisted nitrogen and oxygen etching

Jo Onoda; Faridur Rahman; Seigi Mizuno

doi:10.1380/ejssnt.2008.152

Field emission from W tips sharpened by field-assisted nitrogen and oxygen etching

Jo Onoda, Faridur Rahman, Seigi Mizuno

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Field emission properties were studied for tips sharpened using field-assisted nitrogen and oxygen etching. Sharp single crystal tungsten <111>-oriented tips were fabricated and evaluated by Fowler-Nordheim plots and field-ion microscopy observations. The results demonstrated emissions at lower bias voltages due to the sharpening of the tip apex using the etching. The field emission properties and tip shapes after nitrogen etching were compared with those obtained after oxygen etching.

Original language	English
Pages (from-to)	152-156
Number of pages	5
Journal	e-Journal of Surface Science and Nanotechnology
Volume	6
DOIs	https://doi.org/10.1380/ejssnt.2008.152
Publication status	Published - Jun 7 2008

All Science Journal Classification (ASJC) codes

Biotechnology
Bioengineering
Condensed Matter Physics
Mechanics of Materials
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1380/ejssnt.2008.152

Cite this

@article{d069737dcb4942feabbcfdae2c617724,

title = "Field emission from W tips sharpened by field-assisted nitrogen and oxygen etching",

abstract = "Field emission properties were studied for tips sharpened using field-assisted nitrogen and oxygen etching. Sharp single crystal tungsten <111>-oriented tips were fabricated and evaluated by Fowler-Nordheim plots and field-ion microscopy observations. The results demonstrated emissions at lower bias voltages due to the sharpening of the tip apex using the etching. The field emission properties and tip shapes after nitrogen etching were compared with those obtained after oxygen etching.",

author = "Jo Onoda and Faridur Rahman and Seigi Mizuno",

year = "2008",

month = jun,

day = "7",

doi = "10.1380/ejssnt.2008.152",

language = "English",

volume = "6",

pages = "152--156",

journal = "e-Journal of Surface Science and Nanotechnology",

issn = "1348-0391",

publisher = "Surface Science Society of Japan",

}

TY - JOUR

T1 - Field emission from W tips sharpened by field-assisted nitrogen and oxygen etching

AU - Onoda, Jo

AU - Rahman, Faridur

AU - Mizuno, Seigi

PY - 2008/6/7

Y1 - 2008/6/7

N2 - Field emission properties were studied for tips sharpened using field-assisted nitrogen and oxygen etching. Sharp single crystal tungsten <111>-oriented tips were fabricated and evaluated by Fowler-Nordheim plots and field-ion microscopy observations. The results demonstrated emissions at lower bias voltages due to the sharpening of the tip apex using the etching. The field emission properties and tip shapes after nitrogen etching were compared with those obtained after oxygen etching.

AB - Field emission properties were studied for tips sharpened using field-assisted nitrogen and oxygen etching. Sharp single crystal tungsten <111>-oriented tips were fabricated and evaluated by Fowler-Nordheim plots and field-ion microscopy observations. The results demonstrated emissions at lower bias voltages due to the sharpening of the tip apex using the etching. The field emission properties and tip shapes after nitrogen etching were compared with those obtained after oxygen etching.

UR - http://www.scopus.com/inward/record.url?scp=45949085947&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45949085947&partnerID=8YFLogxK

U2 - 10.1380/ejssnt.2008.152

DO - 10.1380/ejssnt.2008.152

M3 - Article

AN - SCOPUS:45949085947

SN - 1348-0391

VL - 6

SP - 152

EP - 156

JO - e-Journal of Surface Science and Nanotechnology

JF - e-Journal of Surface Science and Nanotechnology

ER -

Field emission from W tips sharpened by field-assisted nitrogen and oxygen etching

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this