Field emitter arrays made of ion beam modified photoresist

Tanemasa Asano; Daisuke Sasaguri; Eiji Shibata; Katsuya Higa

Field emitter arrays made of ion beam modified photoresist

Tanemasa Asano, Daisuke Sasaguri, Eiji Shibata, Katsuya Higa

Center for Japan-Egypt Cooperation in Science and Technology（E-JUST Center）

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The field emission from Ar ion irradiated photoresist material is demonstrated. A photoresist of novolac-type positive-tone is used as the test material. The electrical resistivity of the photoresist film is found to decrease after Ar ion implantation at doses on the order of 10¹⁶ cm^-2. Raman spectroscopy shows that carbon-carbon bonds such as the graphite bond are produced due to ion bombardment. The field emission is tested by preparing a pyramid-like structured photoresist using oxygen-plasma etching. Electron emission of the order of 10^-6 A is observed for implanted samples, while no emission is detected from unimplanted samples. Fabrication of field emitter arrays with photoresist emitter using a Si mold technique is demonstrated.

Original language	English
Title of host publication	Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Editors	Anon
Publisher	IEEE
Pages	622-627
Number of pages	6
Publication status	Published - 1997
Event	Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea Duration: Aug 17 1997 → Aug 21 1997

Other

Other	Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
City	Kyongju, Korea
Period	8/17/97 → 8/21/97

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@inproceedings{57218fb44cb847dab79b72981886431b,

title = "Field emitter arrays made of ion beam modified photoresist",

abstract = "The field emission from Ar ion irradiated photoresist material is demonstrated. A photoresist of novolac-type positive-tone is used as the test material. The electrical resistivity of the photoresist film is found to decrease after Ar ion implantation at doses on the order of 1016 cm-2. Raman spectroscopy shows that carbon-carbon bonds such as the graphite bond are produced due to ion bombardment. The field emission is tested by preparing a pyramid-like structured photoresist using oxygen-plasma etching. Electron emission of the order of 10-6 A is observed for implanted samples, while no emission is detected from unimplanted samples. Fabrication of field emitter arrays with photoresist emitter using a Si mold technique is demonstrated.",

author = "Tanemasa Asano and Daisuke Sasaguri and Eiji Shibata and Katsuya Higa",

year = "1997",

language = "English",

pages = "622--627",

editor = "Anon",

booktitle = "Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC",

publisher = "IEEE",

note = "Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 ; Conference date: 17-08-1997 Through 21-08-1997",

}

TY - GEN

T1 - Field emitter arrays made of ion beam modified photoresist

AU - Asano, Tanemasa

AU - Sasaguri, Daisuke

AU - Shibata, Eiji

AU - Higa, Katsuya

PY - 1997

Y1 - 1997

N2 - The field emission from Ar ion irradiated photoresist material is demonstrated. A photoresist of novolac-type positive-tone is used as the test material. The electrical resistivity of the photoresist film is found to decrease after Ar ion implantation at doses on the order of 1016 cm-2. Raman spectroscopy shows that carbon-carbon bonds such as the graphite bond are produced due to ion bombardment. The field emission is tested by preparing a pyramid-like structured photoresist using oxygen-plasma etching. Electron emission of the order of 10-6 A is observed for implanted samples, while no emission is detected from unimplanted samples. Fabrication of field emitter arrays with photoresist emitter using a Si mold technique is demonstrated.

AB - The field emission from Ar ion irradiated photoresist material is demonstrated. A photoresist of novolac-type positive-tone is used as the test material. The electrical resistivity of the photoresist film is found to decrease after Ar ion implantation at doses on the order of 1016 cm-2. Raman spectroscopy shows that carbon-carbon bonds such as the graphite bond are produced due to ion bombardment. The field emission is tested by preparing a pyramid-like structured photoresist using oxygen-plasma etching. Electron emission of the order of 10-6 A is observed for implanted samples, while no emission is detected from unimplanted samples. Fabrication of field emitter arrays with photoresist emitter using a Si mold technique is demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0031364970&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031364970&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0031364970

SP - 622

EP - 627

BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

A2 - Anon, null

PB - IEEE

T2 - Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97

Y2 - 17 August 1997 through 21 August 1997

ER -

Field emitter arrays made of ion beam modified photoresist

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