Field emitter arrays made of ion beam modified photoresist

Tanemasa Asano, Daisuke Sasaguri, Eiji Shibata, Katsuya Higa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The field emission from Ar ion irradiated photoresist material is demonstrated. A photoresist of novolac-type positive-tone is used as the test material. The electrical resistivity of the photoresist film is found to decrease after Ar ion implantation at doses on the order of 1016 cm-2. Raman spectroscopy shows that carbon-carbon bonds such as the graphite bond are produced due to ion bombardment. The field emission is tested by preparing a pyramid-like structured photoresist using oxygen-plasma etching. Electron emission of the order of 10-6 A is observed for implanted samples, while no emission is detected from unimplanted samples. Fabrication of field emitter arrays with photoresist emitter using a Si mold technique is demonstrated.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Editors Anon
PublisherIEEE
Pages622-627
Number of pages6
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea
Duration: Aug 17 1997Aug 21 1997

Other

OtherProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
CityKyongju, Korea
Period8/17/978/21/97

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All Science Journal Classification (ASJC) codes

  • Surfaces and Interfaces

Cite this

Asano, T., Sasaguri, D., Shibata, E., & Higa, K. (1997). Field emitter arrays made of ion beam modified photoresist. In Anon (Ed.), Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 622-627). IEEE.