Field-induced current modulation in nanoporous semiconductor, electron-doped 12CaO·7Al2O3

Toshio Kamiya, Shouzou Aiba, Masashi Miyakawa, Kenji Nomura, Satoru Matsuishi, Katsuro Hayashi, Kazushige Ueda, Masahiro Hirano, Hideo Hosono

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

12CaO·Al2O3 (C12A7) has a unique crystal structure composed of positively charged cages ∼0.4 nm in inner diameter and a free oxygen ion (O2-) clathrated in one-sixth of the cages. C12A7 can be converted to inorganic electride by replacing the clathrated oxygen ions with electrons, and the electride exhibits degenerate-type conduction with room-temperature conductivities >100 S cm-1. In intermediate states, semiconductive C12A7 can be obtained by controlling electron density. In this study, we examined effects of electric field on carrier transport properties of the semiconductive C12A7 using a field-effect transistor (FET) structure targeted for future mesoscopic devices and electrochemical devices that will utilize the quantum-dot-like cage structures and chemically active clathrated anions in C12A7. FETs were fabricated using two types of samples, (i) single-crystalline bulk and (ii) polycrystalline thin films, for channels. First, conditions to form good contacts for source and drain electrodes were examined because the semiconductive C12A7 has a small work function, and it was difficult to form good electrical contacts with metals. It was found that Pt was the best metal with the lowest contact resistance to C12A7, and thermal annealing at ≥300 °C improved its non-ohmic characteristics. Electrical conductivity was modulated by 1-2 orders of magnitude by applying gate voltage. Apparent field-effect mobilities were 0.02-0.08 cm2 (V s) -1, which were comparable with the drift mobilities of the semiconductive C12A7. This is the first demonstration of a semiconductor device using an electride.

Original languageEnglish
Pages (from-to)6311-6316
Number of pages6
JournalChemistry of Materials
Volume17
Issue number25
DOIs
Publication statusPublished - Dec 13 2005
Externally publishedYes

Fingerprint

Induced currents
Field effect transistors
Metals
Modulation
Ions
Semiconductor materials
Oxygen
Carrier transport
Electrons
Contact resistance
Semiconductor devices
Transport properties
Semiconductor quantum dots
Anions
Carrier concentration
Demonstrations
Negative ions
Crystal structure
Electric fields
Annealing

All Science Journal Classification (ASJC) codes

  • Materials Chemistry
  • Materials Science(all)

Cite this

Kamiya, T., Aiba, S., Miyakawa, M., Nomura, K., Matsuishi, S., Hayashi, K., ... Hosono, H. (2005). Field-induced current modulation in nanoporous semiconductor, electron-doped 12CaO·7Al2O3 . Chemistry of Materials, 17(25), 6311-6316. https://doi.org/10.1021/cm051904s

Field-induced current modulation in nanoporous semiconductor, electron-doped 12CaO·7Al2O3 . / Kamiya, Toshio; Aiba, Shouzou; Miyakawa, Masashi; Nomura, Kenji; Matsuishi, Satoru; Hayashi, Katsuro; Ueda, Kazushige; Hirano, Masahiro; Hosono, Hideo.

In: Chemistry of Materials, Vol. 17, No. 25, 13.12.2005, p. 6311-6316.

Research output: Contribution to journalArticle

Kamiya, T, Aiba, S, Miyakawa, M, Nomura, K, Matsuishi, S, Hayashi, K, Ueda, K, Hirano, M & Hosono, H 2005, 'Field-induced current modulation in nanoporous semiconductor, electron-doped 12CaO·7Al2O3 ', Chemistry of Materials, vol. 17, no. 25, pp. 6311-6316. https://doi.org/10.1021/cm051904s
Kamiya, Toshio ; Aiba, Shouzou ; Miyakawa, Masashi ; Nomura, Kenji ; Matsuishi, Satoru ; Hayashi, Katsuro ; Ueda, Kazushige ; Hirano, Masahiro ; Hosono, Hideo. / Field-induced current modulation in nanoporous semiconductor, electron-doped 12CaO·7Al2O3 . In: Chemistry of Materials. 2005 ; Vol. 17, No. 25. pp. 6311-6316.
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