Field-plate structure dependence of current collapse phenomena in high-voltage GaN-HEMTs

Wataru Saito, Yorito Kakiuchi, Tomohiro Nitta, Yasunobu Saito, Takao Noda, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno, Masakazu Yamaguchi

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63 Citations (Scopus)

Abstract

Four types of the field-plate (FP) structure were fabricated to discuss the relation between the current collapse phenomena and the electric-field peak in high-voltage GaN-HEMTs. The on-resistance increase caused by current collapse phenomena is dramatically reduced by the single-gate-FP and dual-FP structures compared with the sourceFP structure, because the gate-edge electric field was reduced by the gate-FP electrode. The dual-FP structure was slightly more effective to suppress the collapse phenomena than the single-gate-FP structure, because the two-step FP structure relaxes the electric-field concentration at the FP edge. These results show that the gate-edge peak strongly affects the on-resistance modulation. Although the FP edge peak also causes the collapse phenomena, its influence is weak.

Original languageEnglish
Article number5471189
Pages (from-to)659-661
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number7
DOIs
Publication statusPublished - Jul 1 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Saito, W., Kakiuchi, Y., Nitta, T., Saito, Y., Noda, T., Fujimoto, H., Yoshioka, A., Ohno, T., & Yamaguchi, M. (2010). Field-plate structure dependence of current collapse phenomena in high-voltage GaN-HEMTs. IEEE Electron Device Letters, 31(7), 659-661. [5471189]. https://doi.org/10.1109/LED.2010.2048741