Filling subquarter-micron trench structure with high-purity copper using plasma reactor with H atom source

Hong Jie Jin, Masaharu Shiratani, Yasuhiro Nakatake, Kazunori Koga, Toshio Kinoshita, Yukio Watanabe

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Abstract

A plasma chemical vapor deposition reactor with an additional source of H atoms, in which concentrations of both H atoms and Cu-containing radicals are controllable independently, is developed to fill fine patterns for interconnects with high-purity Cu. Cu-filling property in trench structure with the reactor is evaluated under deposition conditions of high-purity (≈100%) Cu films. The surface reaction probability β of Cu-containing radicals is deduced from the coverage shape of Cu deposition in the trench structure and its Monte Carlo simulation. With decreasing the main discharge power Pm, the β value decreases from 0.2 for Pm = 35 W to 0.01 for Pm = 3 W. Using this reactor, we have realized filling of high purity Cu in a trench 0.3 μm wide and 0.9 μm deep.

Original languageEnglish
Pages (from-to)57-61
Number of pages5
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume5
Issue number1
Publication statusPublished - Mar 1 2000
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering

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