Abstract
A plasma chemical vapor deposition reactor with an additional source of H atoms, in which concentrations of both H atoms and Cu-containing radicals are controllable independently, is developed to fill fine patterns for interconnects with high-purity Cu. Cu-filling property in trench structure with the reactor is evaluated under deposition conditions of high-purity (≈100%) Cu films. The surface reaction probability β of Cu-containing radicals is deduced from the coverage shape of Cu deposition in the trench structure and its Monte Carlo simulation. With decreasing the main discharge power Pm, the β value decreases from 0.2 for Pm = 35 W to 0.01 for Pm = 3 W. Using this reactor, we have realized filling of high purity Cu in a trench 0.3 μm wide and 0.9 μm deep.
Original language | English |
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Pages (from-to) | 57-61 |
Number of pages | 5 |
Journal | Research Reports on Information Science and Electrical Engineering of Kyushu University |
Volume | 5 |
Issue number | 1 |
Publication status | Published - Mar 1 2000 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Computer Science(all)
- Electrical and Electronic Engineering