Film formation by motion control of ionized precursors in electric field

Motoaki Adachi, Toshiyuki Fujimoto, Koichi Nakaso, Kikuo Okuyama, Frank G. Shi, Hideki Sato, Toshio Ando, Hideki Tomioka

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Abstract

A chemical vapor deposition (CVD) method, called ionization CVD, in which ionized source molecules were deposited on a substrate by Coulombic force, was developed to control gas-phase reaction and film morphology. This method was applied to the tetraethylorthosilicate (TEOS)/ ozone-atmospheric pressure chemical vapor deposition process by using the surface corona discharge. TEOS/O 3 films deposited on SiN and SiO 2 films by this CVD method showed good properties for the flow shape, the gap filling and the surface morphology. In Fourier-transform infrared spectra of gas-phase intermediates collected in the vapor condenser, the intensity of the absorption peak at 600 cm -1 was different between ionized intermediates and nonionized intermediates.

Original languageEnglish
Pages (from-to)1973-1975
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number13
DOIs
Publication statusPublished - Sep 27 1999

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Adachi, M., Fujimoto, T., Nakaso, K., Okuyama, K., Shi, F. G., Sato, H., ... Tomioka, H. (1999). Film formation by motion control of ionized precursors in electric field. Applied Physics Letters, 75(13), 1973-1975. https://doi.org/10.1063/1.124889