Finite difference time domain analysis of the light extraction efficiency in organic light-emitting field-effect transistors

Robert Gehlhaar, Masayuki Yahiro, Chihaya Adachi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The authors report on three-dimensional numerical optical simulations of the emission outcoupling efficiency in light-emitting devices with a field-effect carrier transport. The finite difference time domain method is applied to organic thin film structures on a silicon substrate with metal and metal oxide electrodes. Simulations are performed for Au, Ag, and indium tin oxide electrodes in a bottom gate, bottom contact geometry. Additional attention is paid to the dependence on electrode thickness and contact shape. We demonstrate that in unipolar driven devices with Si gate, silicon dioxide insulator, and 40 nm thick organic films, the maximum outcoupling efficiency is below 10%. This value can be increased by the implementation of a metal reflecting layer on the Si substrate. In further studies, the emission efficiency in the ambipolar regime is investigated. The result presents the dependence of light extraction on the light source-electrode distance for rectangular and wedge shaped contacts.

Original languageEnglish
Article number033116
JournalJournal of Applied Physics
Volume104
Issue number3
DOIs
Publication statusPublished - Aug 25 2008

Fingerprint

time domain analysis
field effect transistors
electrodes
finite difference time domain method
indium oxides
metals
wedges
tin oxides
metal oxides
light sources
simulation
insulators
silicon dioxide
silicon
thin films
geometry

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Finite difference time domain analysis of the light extraction efficiency in organic light-emitting field-effect transistors. / Gehlhaar, Robert; Yahiro, Masayuki; Adachi, Chihaya.

In: Journal of Applied Physics, Vol. 104, No. 3, 033116, 25.08.2008.

Research output: Contribution to journalArticle

@article{5f8fdabb857847d79e45ccdcf461ad71,
title = "Finite difference time domain analysis of the light extraction efficiency in organic light-emitting field-effect transistors",
abstract = "The authors report on three-dimensional numerical optical simulations of the emission outcoupling efficiency in light-emitting devices with a field-effect carrier transport. The finite difference time domain method is applied to organic thin film structures on a silicon substrate with metal and metal oxide electrodes. Simulations are performed for Au, Ag, and indium tin oxide electrodes in a bottom gate, bottom contact geometry. Additional attention is paid to the dependence on electrode thickness and contact shape. We demonstrate that in unipolar driven devices with Si gate, silicon dioxide insulator, and 40 nm thick organic films, the maximum outcoupling efficiency is below 10{\%}. This value can be increased by the implementation of a metal reflecting layer on the Si substrate. In further studies, the emission efficiency in the ambipolar regime is investigated. The result presents the dependence of light extraction on the light source-electrode distance for rectangular and wedge shaped contacts.",
author = "Robert Gehlhaar and Masayuki Yahiro and Chihaya Adachi",
year = "2008",
month = "8",
day = "25",
doi = "10.1063/1.2968132",
language = "English",
volume = "104",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Finite difference time domain analysis of the light extraction efficiency in organic light-emitting field-effect transistors

AU - Gehlhaar, Robert

AU - Yahiro, Masayuki

AU - Adachi, Chihaya

PY - 2008/8/25

Y1 - 2008/8/25

N2 - The authors report on three-dimensional numerical optical simulations of the emission outcoupling efficiency in light-emitting devices with a field-effect carrier transport. The finite difference time domain method is applied to organic thin film structures on a silicon substrate with metal and metal oxide electrodes. Simulations are performed for Au, Ag, and indium tin oxide electrodes in a bottom gate, bottom contact geometry. Additional attention is paid to the dependence on electrode thickness and contact shape. We demonstrate that in unipolar driven devices with Si gate, silicon dioxide insulator, and 40 nm thick organic films, the maximum outcoupling efficiency is below 10%. This value can be increased by the implementation of a metal reflecting layer on the Si substrate. In further studies, the emission efficiency in the ambipolar regime is investigated. The result presents the dependence of light extraction on the light source-electrode distance for rectangular and wedge shaped contacts.

AB - The authors report on three-dimensional numerical optical simulations of the emission outcoupling efficiency in light-emitting devices with a field-effect carrier transport. The finite difference time domain method is applied to organic thin film structures on a silicon substrate with metal and metal oxide electrodes. Simulations are performed for Au, Ag, and indium tin oxide electrodes in a bottom gate, bottom contact geometry. Additional attention is paid to the dependence on electrode thickness and contact shape. We demonstrate that in unipolar driven devices with Si gate, silicon dioxide insulator, and 40 nm thick organic films, the maximum outcoupling efficiency is below 10%. This value can be increased by the implementation of a metal reflecting layer on the Si substrate. In further studies, the emission efficiency in the ambipolar regime is investigated. The result presents the dependence of light extraction on the light source-electrode distance for rectangular and wedge shaped contacts.

UR - http://www.scopus.com/inward/record.url?scp=49749137569&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49749137569&partnerID=8YFLogxK

U2 - 10.1063/1.2968132

DO - 10.1063/1.2968132

M3 - Article

AN - SCOPUS:49749137569

VL - 104

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 033116

ER -