First principles and themodynamical studies on matel organic vaper phase epitaxy of GaN

Kenji Shiraishi, Kazuki Sekiguchi, Hiroki Shirakawa, Kenta Chokawa, Masaaki Araidai, Yoshihiro Kangawa, Koichi Kakimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We analyzed metal organic vapor phase epitaxy growth mechanism of Ill-nitride semiconductors, GaN, A1N and InN based on first-principles calculations and thermodynamic analysis. With this calculated methods, we investigate the decomposition process of the group III source gases, X(CH 3 )3 (X = Ga, Al, In) at finite temperatures and whether the (CH 3 ) 3 AlNH 2 adduct can be formed or not. Our calculated results show that (CH 3 ) 2 GaNH 2 adduct cannot be formed in the gas phase reaction in GaN MOVPE. Whereas, (CH 3 ) 2 AINH 2 adduct can be formed so much in gas phase in A1N MOVPE. In case of GaN MOVPE, trimethylgallium (TMG, [Ga(CH 3 ) 3 ]) almost decomposes into Ga gas on growth surface by the assistance of H 2 carrier gas instead of (CH 3 ) 2 GaNH 2 adduct formation. Moreover, in case of InN MOVPE, (CH 3 ) 2 lnNH 2 adduct formation cannot occur and it is relatively easy that In gas is produced even if there is no H 2 carrier gas.

Original languageEnglish
Title of host publicationECS Transactions
EditorsDurga Misra, Stefan De Gendt, Michel Housa, Koji Kita, Dolf Landheer
PublisherElectrochemical Society Inc.
Pages295-301
Number of pages7
Edition1
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - Jan 1 2017
Event15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting - National Harbor, United States
Duration: Oct 1 2017Oct 5 2017

Publication series

NameECS Transactions
Number1
Volume80
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

Other15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period10/1/1710/5/17

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Shiraishi, K., Sekiguchi, K., Shirakawa, H., Chokawa, K., Araidai, M., Kangawa, Y., & Kakimoto, K. (2017). First principles and themodynamical studies on matel organic vaper phase epitaxy of GaN. In D. Misra, S. De Gendt, M. Housa, K. Kita, & D. Landheer (Eds.), ECS Transactions (1 ed., pp. 295-301). (ECS Transactions; Vol. 80, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/08001.0295ecst