First principles and themodynamical studies on matel organic vaper phase epitaxy of GaN

Kenji Shiraishi, Kazuki Sekiguchi, Hiroki Shirakawa, Kenta Chokawa, Masaaki Araidai, Yoshihiro Kangawa, Koichi Kakimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We analyzed metal organic vapor phase epitaxy growth mechanism of Ill-nitride semiconductors, GaN, A1N and InN based on first-principles calculations and thermodynamic analysis. With this calculated methods, we investigate the decomposition process of the group III source gases, X(CH3)3 (X = Ga, Al, In) at finite temperatures and whether the (CH3)3 AlNH2 adduct can be formed or not. Our calculated results show that (CH3)2 GaNH2 adduct cannot be formed in the gas phase reaction in GaN MOVPE. Whereas, (CH3)2AINH2 adduct can be formed so much in gas phase in A1N MOVPE. In case of GaN MOVPE, trimethylgallium (TMG, [Ga(CH3)3]) almost decomposes into Ga gas on growth surface by the assistance of H2 carrier gas instead of (CH3)2GaNH2 adduct formation. Moreover, in case of InN MOVPE, (CH3)2lnNH2 adduct formation cannot occur and it is relatively easy that In gas is produced even if there is no H2 carrier gas.

Original languageEnglish
Title of host publicationECS Transactions
EditorsDurga Misra, Stefan De Gendt, Michel Housa, Koji Kita, Dolf Landheer
PublisherElectrochemical Society Inc.
Pages295-301
Number of pages7
Edition1
ISBN (Electronic)9781607688181
ISBN (Print)9781623324704
DOIs
Publication statusPublished - 2017
Event15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting - National Harbor, United States
Duration: Oct 1 2017Oct 5 2017

Publication series

NameECS Transactions
Number1
Volume80
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

Other15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting
Country/TerritoryUnited States
CityNational Harbor
Period10/1/1710/5/17

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint

Dive into the research topics of 'First principles and themodynamical studies on matel organic vaper phase epitaxy of GaN'. Together they form a unique fingerprint.

Cite this