First principles approach to C aggregation process during 0th graphene growth on SiC(0001)

Masato Inoue, Hiroyuki Kageshima, Yoshihiro Kangawa, Koichi Kakimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The C clustering process during the 0th graphene growth on SiC(0001) was investigated by a first principles approach. It was found that the structure of C clusters is not purely-hexagonal but penta-heptagonal, including pentagons and heptagons. We also revealed that mono-ring clusters, the lowest-energy clusters in vacuum, are no longer the ground-state configuration on SiC(0001). This result suggests a template effect of SiC(0001) for the growth of graphene.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PublisherAmerican Institute of Physics Inc.
Pages129-130
Number of pages2
ISBN (Print)9780735411944
DOIs
Publication statusPublished - Jan 1 2013
Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
Duration: Jul 29 2012Aug 3 2012

Publication series

NameAIP Conference Proceedings
Volume1566
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other31st International Conference on the Physics of Semiconductors, ICPS 2012
CountrySwitzerland
CityZurich
Period7/29/128/3/12

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Inoue, M., Kageshima, H., Kangawa, Y., & Kakimoto, K. (2013). First principles approach to C aggregation process during 0th graphene growth on SiC(0001). In Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 (pp. 129-130). (AIP Conference Proceedings; Vol. 1566). American Institute of Physics Inc.. https://doi.org/10.1063/1.4848319