First-principles calculation of 0th-layer graphene-like growth of C on SiC(0001)

Masato Inoue, Hiroyuki Kageshima, Yoshihiro Kangawa, Koichi Kakimoto

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We use a first-principles approach to analyze the clustering of C atoms during the initial stage of 0th-layer graphene-like growth on SiC(0001). We started the layer with the lowest-energy hexagonal C ring and then let it grow. The growth produced pentagonal rings with a heptagonal ring in a graphene-like (penta-heptagonal) structure. We also studied the chemical potential of C atoms on SiC(0001) and revealed that the C clustering begins at a surface coverage of 0.25-0.33 atom/SiC(0001)-(1×1). Finally, we confirmed that the energetic stabilities of penta-heptagonal clusters on SiC(0001) exceed that of single C rings (7-18 atoms), the lowest-energy structure of free-standing C 7-18 clusters. Hence, the results show that SiC(0001) acts as a template for graphene-like growth.

Original languageEnglish
Article number085417
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume86
Issue number8
DOIs
Publication statusPublished - Aug 8 2012

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

First-principles calculation of 0th-layer graphene-like growth of C on SiC(0001). / Inoue, Masato; Kageshima, Hiroyuki; Kangawa, Yoshihiro; Kakimoto, Koichi.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 86, No. 8, 085417, 08.08.2012.

Research output: Contribution to journalArticle

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