Flexible organic field-effect transistors and complementary inverters based on a solution-processable quinoidal oligothiophene derivative

J. C. Ribierre, K. Takaishi, T. Muto, T. Aoyama

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on the fabrication and characterization of ambipolar organic field-effect transistors based on the solution-processable quinoidal oligothiophene [QQT(CN)4] and using a new fluorinated polymer (AL-X601) with a dielectric constant of 3.1 as dielectric material layer. As-prepared devices show ambipolar transport with hole and electron field-effect mobilities of 6 × 10-2 and 5 × 10-3 cm2/V s respectively as well as an on and off state current ratio higher than 10 3. Influence of a thermal annealing on the device performances was investigated and was found to lead to a majority carrier type conversion from a p-type to an n-type dominant behavior. QQT(CN)4 based field-effect transistors and complementary inverters fabricated on flexible substrates and using Al-X601 as gate dielectric material show high performance and good mechanical stability.

Original languageEnglish
Pages (from-to)1415-1418
Number of pages4
JournalOptical Materials
Volume33
Issue number9
DOIs
Publication statusPublished - Jul 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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