Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET

Y. Uryu, T. Asano

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The operation of a silicon on insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) was investigated in the presence of an electrically floating gate. The floating gate enhanced the emitter injection efficiency by depleting the channel region of its majority carriers. The device technology was found to be compatible with complementary metal oxide semiconductor (CMOS) technology and hence the effect is useful in integration of image sensing devices on SOI technology.

Original languageEnglish
Pages (from-to)1313-1314
Number of pages2
JournalElectronics Letters
Volume37
Issue number21
DOIs
Publication statusPublished - Oct 11 2001

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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