Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET

Y. Uryu, T. Asano

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The operation of a silicon on insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) was investigated in the presence of an electrically floating gate. The floating gate enhanced the emitter injection efficiency by depleting the channel region of its majority carriers. The device technology was found to be compatible with complementary metal oxide semiconductor (CMOS) technology and hence the effect is useful in integration of image sensing devices on SOI technology.

Original languageEnglish
Pages (from-to)1313-1314
Number of pages2
JournalElectronics Letters
Volume37
Issue number21
DOIs
Publication statusPublished - Oct 11 2001

Fingerprint

MOSFET devices
Amplification
Silicon on insulator technology
Silicon
Metals
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET. / Uryu, Y.; Asano, T.

In: Electronics Letters, Vol. 37, No. 21, 11.10.2001, p. 1313-1314.

Research output: Contribution to journalArticle

Uryu, Y. ; Asano, T. / Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET. In: Electronics Letters. 2001 ; Vol. 37, No. 21. pp. 1313-1314.
@article{dc091ea7cc4e4c25bf435be5b74a13ba,
title = "Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET",
abstract = "The operation of a silicon on insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) was investigated in the presence of an electrically floating gate. The floating gate enhanced the emitter injection efficiency by depleting the channel region of its majority carriers. The device technology was found to be compatible with complementary metal oxide semiconductor (CMOS) technology and hence the effect is useful in integration of image sensing devices on SOI technology.",
author = "Y. Uryu and T. Asano",
year = "2001",
month = "10",
day = "11",
doi = "10.1049/el:20010881",
language = "English",
volume = "37",
pages = "1313--1314",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "21",

}

TY - JOUR

T1 - Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET

AU - Uryu, Y.

AU - Asano, T.

PY - 2001/10/11

Y1 - 2001/10/11

N2 - The operation of a silicon on insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) was investigated in the presence of an electrically floating gate. The floating gate enhanced the emitter injection efficiency by depleting the channel region of its majority carriers. The device technology was found to be compatible with complementary metal oxide semiconductor (CMOS) technology and hence the effect is useful in integration of image sensing devices on SOI technology.

AB - The operation of a silicon on insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) was investigated in the presence of an electrically floating gate. The floating gate enhanced the emitter injection efficiency by depleting the channel region of its majority carriers. The device technology was found to be compatible with complementary metal oxide semiconductor (CMOS) technology and hence the effect is useful in integration of image sensing devices on SOI technology.

UR - http://www.scopus.com/inward/record.url?scp=0035846014&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035846014&partnerID=8YFLogxK

U2 - 10.1049/el:20010881

DO - 10.1049/el:20010881

M3 - Article

AN - SCOPUS:0035846014

VL - 37

SP - 1313

EP - 1314

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 21

ER -