Floating gate memory-based monolayer MoS2 transistor with metal nanocrystals embedded in the gate dielectrics

Jingli Wang, Xuming Zou, Xiangheng Xiao, Lei Xu, Chunlan Wang, Changzhong Jiang, Johnny C. Ho, Ti Wang, Jinchai Li, Lei Liao

Research output: Contribution to journalArticlepeer-review

81 Citations (Scopus)


Charge trapping layers are formed from different metallic nanocrystals in MoS2-based nanocrystal floating gate memory cells in a process compatible with existing fabrication technologies. The memory cells with Au nanocrystals exhibit impressive performance with a large memory window of 10 V, a high program/erase ratio of approximately 105 and a long retention time of 10 years.

Original languageEnglish
Pages (from-to)208-213
Number of pages6
Issue number2
Publication statusPublished - Jan 14 2015
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)


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