Flow instability of molten silicon in the Czochralski configuration

Koichi Kakimoto, Minoru Eguchi, Hisao Watanabe, Taketoshi Hibiya

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

The flow instability of molten silicon in the Czochralski configuration has been studied by in-situ observation of melt convection using X-ray radiography and by temperature fluctuation measurement during crystal growth. Flow mode was dependent on an aspect ratio of the melt. For a deep, low aspect ratio melt, with growing crystal which is identical to shouldering process of the growth, the flow was unsteady and non-axisymmetric. For a shallow melt without crystal and crucible rotations, the flow was relatively steady and axisymmetric. However, flow became unsteady and non-axisymmetric for a shallow melt with crystal rotation. Amplitude of directly measured temperature fluctuation in the molten silicon for the case of unsteady and non-axisymmetric flow was larger than that for the relatively steady and axisymmetric flow. The flow instability area, which was also thermally unstable, was found to be larger in the crystal/crucible iso-rotation condition. In contrast Munakata and Tanasawa reported at the International Symposium on Supercomputers for Mechanical Engineering, September 1988, Tokyo that flow instability area was small for the silicone oil with larger Prandtl number.

Original languageEnglish
Pages (from-to)16-20
Number of pages5
JournalJournal of Crystal Growth
Volume102
Issue number1-2
DOIs
Publication statusPublished - Apr 2 1990

Fingerprint

Silicon
Molten materials
axisymmetric flow
Crucibles
Unsteady flow
unsteady flow
Crystal growth
Crystals
Aspect ratio
silicon
configurations
X ray radiography
Silicone Oils
crucibles
Supercomputers
Prandtl number
crystals
Mechanical engineering
Crystallization
Silicones

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Flow instability of molten silicon in the Czochralski configuration. / Kakimoto, Koichi; Eguchi, Minoru; Watanabe, Hisao; Hibiya, Taketoshi.

In: Journal of Crystal Growth, Vol. 102, No. 1-2, 02.04.1990, p. 16-20.

Research output: Contribution to journalArticle

Kakimoto, Koichi ; Eguchi, Minoru ; Watanabe, Hisao ; Hibiya, Taketoshi. / Flow instability of molten silicon in the Czochralski configuration. In: Journal of Crystal Growth. 1990 ; Vol. 102, No. 1-2. pp. 16-20.
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