Flux pinning in amorphous MoSi films for abrikosov vortex memory

Shugo Kubo, Masashi Mukaida, Kazunori Miyahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The use of superconducting films having low flux pinning density in a vortex storage region (VSR) of an Abrikosov vortex memory was assessed. Flux pinning densities in MoSi thin films were examined with particular attention to parallel field behavior. Pinning force densities in the perpendicular field decreased with decreasing film thickness. On the other hand these values for thinner films in the parallel field were one order of magnitude larger than those in the perpendicular field. This indicated the need for increasing the perpendicular conponent in the magnetic field generated by the write current line in order to enhance low write current operation. An improved cell structure was devised in which the write current line is located adjacent to the VSR. This arrangement proved to be effective in stable low current operation in a vortex memory.

Original languageEnglish
Title of host publicationAdvances in Cryogenic Engineering
PublisherPubl by Plenum Publ Corp
Pages789-796
Number of pages8
ISBN (Print)0306428016
Publication statusPublished - Dec 1 1988
Externally publishedYes
EventProceedings of the Seventh International Cryogenic Materials Conference - ICMC - St. Charles, IL, USA
Duration: Jun 14 1987Jun 18 1987

Publication series

NameAdvances in Cryogenic Engineering
Volume34
ISSN (Print)0065-2482

Other

OtherProceedings of the Seventh International Cryogenic Materials Conference - ICMC
CitySt. Charles, IL, USA
Period6/14/876/18/87

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kubo, S., Mukaida, M., & Miyahara, K. (1988). Flux pinning in amorphous MoSi films for abrikosov vortex memory. In Advances in Cryogenic Engineering (pp. 789-796). (Advances in Cryogenic Engineering; Vol. 34). Publ by Plenum Publ Corp.