Flux pinning properties of nano-rods comprised of BaMO3 (M = Zr, Sn) in REBa2Cu3O7-δ thin films prepared by PLD method

T. Sueyoshi, K. Yonekura, R. Kajita, T. Fujiyoshi, Masashi Mukaida, Ryo Teranishi, H. Kai, K. Matsumoto, Y. Yoshida, A. Ichinose, S. Horii, S. Awaji, K. Watanabe

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Abstract

We investigated the flux pinning properties of nano-rods comprised of BaZrO3 and BaSnO3 in REBa2Cu3O7-δ (REBCO, RE: rare earth elements) thin films. The doping amounts of BaZrO3 in YBa2Cu3O7-δ thin films and BaSnO3 in ErBa2Cu3O7-δ thin films were varied with 0-3.5 wt% and 2.0-4.0 wt%, respectively. The in-field critical current density of 1.5 wt%-BaZrO3-doped YBa2Cu3O7-δ film was higher than those of any other samples measured in this study. The α values in the relation of Jc-B are 0.2-0.3 for the BaZrO3- and BaSnO3-doped films. This fact shows the introduction of nano-rods is effective for the less magnetic field dependence of Jc. As one of the important results, it was found that the introduction of nano-rods caused the peak or kink in the magnetic field dependence of the pinning parameter m which was derived from the scaling of current-voltage characteristics. This phenomenon is the sign of the flux pinning due to the one-dimensional pinning centers. The peak fields of the BaSnO3-doped films were slightly lower than those of the BaZrO3-doped films, though the dope levels of the BaSnO3-doped films were higher. This suggests that the diameter of BaSnO3 nano-rods is larger than that of BaZrO3 ones.

Original languageEnglish
Pages (from-to)1396-1399
Number of pages4
JournalPhysica C: Superconductivity and its applications
Volume469
Issue number15-20
DOIs
Publication statusPublished - Oct 15 2009

Fingerprint

Flux pinning
flux pinning
Pulsed laser deposition
rods
Thin films
thin films
Magnetic fields
Current voltage characteristics
Rare earth elements
magnetic fields
critical current
rare earth elements
Doping (additives)
1-dodecylpyridoxal
current density
scaling
electric potential

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Energy Engineering and Power Technology
  • Electronic, Optical and Magnetic Materials

Cite this

Flux pinning properties of nano-rods comprised of BaMO3 (M = Zr, Sn) in REBa2Cu3O7-δ thin films prepared by PLD method. / Sueyoshi, T.; Yonekura, K.; Kajita, R.; Fujiyoshi, T.; Mukaida, Masashi; Teranishi, Ryo; Kai, H.; Matsumoto, K.; Yoshida, Y.; Ichinose, A.; Horii, S.; Awaji, S.; Watanabe, K.

In: Physica C: Superconductivity and its applications, Vol. 469, No. 15-20, 15.10.2009, p. 1396-1399.

Research output: Contribution to journalArticle

Sueyoshi, T, Yonekura, K, Kajita, R, Fujiyoshi, T, Mukaida, M, Teranishi, R, Kai, H, Matsumoto, K, Yoshida, Y, Ichinose, A, Horii, S, Awaji, S & Watanabe, K 2009, 'Flux pinning properties of nano-rods comprised of BaMO3 (M = Zr, Sn) in REBa2Cu3O7-δ thin films prepared by PLD method', Physica C: Superconductivity and its applications, vol. 469, no. 15-20, pp. 1396-1399. https://doi.org/10.1016/j.physc.2009.05.083
Sueyoshi, T. ; Yonekura, K. ; Kajita, R. ; Fujiyoshi, T. ; Mukaida, Masashi ; Teranishi, Ryo ; Kai, H. ; Matsumoto, K. ; Yoshida, Y. ; Ichinose, A. ; Horii, S. ; Awaji, S. ; Watanabe, K. / Flux pinning properties of nano-rods comprised of BaMO3 (M = Zr, Sn) in REBa2Cu3O7-δ thin films prepared by PLD method. In: Physica C: Superconductivity and its applications. 2009 ; Vol. 469, No. 15-20. pp. 1396-1399.
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abstract = "We investigated the flux pinning properties of nano-rods comprised of BaZrO3 and BaSnO3 in REBa2Cu3O7-δ (REBCO, RE: rare earth elements) thin films. The doping amounts of BaZrO3 in YBa2Cu3O7-δ thin films and BaSnO3 in ErBa2Cu3O7-δ thin films were varied with 0-3.5 wt{\%} and 2.0-4.0 wt{\%}, respectively. The in-field critical current density of 1.5 wt{\%}-BaZrO3-doped YBa2Cu3O7-δ film was higher than those of any other samples measured in this study. The α values in the relation of Jc-B-α are 0.2-0.3 for the BaZrO3- and BaSnO3-doped films. This fact shows the introduction of nano-rods is effective for the less magnetic field dependence of Jc. As one of the important results, it was found that the introduction of nano-rods caused the peak or kink in the magnetic field dependence of the pinning parameter m which was derived from the scaling of current-voltage characteristics. This phenomenon is the sign of the flux pinning due to the one-dimensional pinning centers. The peak fields of the BaSnO3-doped films were slightly lower than those of the BaZrO3-doped films, though the dope levels of the BaSnO3-doped films were higher. This suggests that the diameter of BaSnO3 nano-rods is larger than that of BaZrO3 ones.",
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T1 - Flux pinning properties of nano-rods comprised of BaMO3 (M = Zr, Sn) in REBa2Cu3O7-δ thin films prepared by PLD method

AU - Sueyoshi, T.

AU - Yonekura, K.

AU - Kajita, R.

AU - Fujiyoshi, T.

AU - Mukaida, Masashi

AU - Teranishi, Ryo

AU - Kai, H.

AU - Matsumoto, K.

AU - Yoshida, Y.

AU - Ichinose, A.

AU - Horii, S.

AU - Awaji, S.

AU - Watanabe, K.

PY - 2009/10/15

Y1 - 2009/10/15

N2 - We investigated the flux pinning properties of nano-rods comprised of BaZrO3 and BaSnO3 in REBa2Cu3O7-δ (REBCO, RE: rare earth elements) thin films. The doping amounts of BaZrO3 in YBa2Cu3O7-δ thin films and BaSnO3 in ErBa2Cu3O7-δ thin films were varied with 0-3.5 wt% and 2.0-4.0 wt%, respectively. The in-field critical current density of 1.5 wt%-BaZrO3-doped YBa2Cu3O7-δ film was higher than those of any other samples measured in this study. The α values in the relation of Jc-B-α are 0.2-0.3 for the BaZrO3- and BaSnO3-doped films. This fact shows the introduction of nano-rods is effective for the less magnetic field dependence of Jc. As one of the important results, it was found that the introduction of nano-rods caused the peak or kink in the magnetic field dependence of the pinning parameter m which was derived from the scaling of current-voltage characteristics. This phenomenon is the sign of the flux pinning due to the one-dimensional pinning centers. The peak fields of the BaSnO3-doped films were slightly lower than those of the BaZrO3-doped films, though the dope levels of the BaSnO3-doped films were higher. This suggests that the diameter of BaSnO3 nano-rods is larger than that of BaZrO3 ones.

AB - We investigated the flux pinning properties of nano-rods comprised of BaZrO3 and BaSnO3 in REBa2Cu3O7-δ (REBCO, RE: rare earth elements) thin films. The doping amounts of BaZrO3 in YBa2Cu3O7-δ thin films and BaSnO3 in ErBa2Cu3O7-δ thin films were varied with 0-3.5 wt% and 2.0-4.0 wt%, respectively. The in-field critical current density of 1.5 wt%-BaZrO3-doped YBa2Cu3O7-δ film was higher than those of any other samples measured in this study. The α values in the relation of Jc-B-α are 0.2-0.3 for the BaZrO3- and BaSnO3-doped films. This fact shows the introduction of nano-rods is effective for the less magnetic field dependence of Jc. As one of the important results, it was found that the introduction of nano-rods caused the peak or kink in the magnetic field dependence of the pinning parameter m which was derived from the scaling of current-voltage characteristics. This phenomenon is the sign of the flux pinning due to the one-dimensional pinning centers. The peak fields of the BaSnO3-doped films were slightly lower than those of the BaZrO3-doped films, though the dope levels of the BaSnO3-doped films were higher. This suggests that the diameter of BaSnO3 nano-rods is larger than that of BaZrO3 ones.

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