TY - JOUR
T1 - Focused ion beam imaging of defects in multicrystalline si for photovoltaic application
AU - Miyamura, Y.
AU - Sekiguchi, T.
AU - Chen, J.
AU - Li, J. Y.
AU - Watanabe, K.
AU - Kumagai, K.
AU - Ogura, A.
PY - 2014
Y1 - 2014
N2 - We demonstrate the imaging of the extended defects in Si materials using a focused ion beam instrument. Since Ga-ion beam has small penetration depth and high channeling character compared with electron beam, the secondary electron signal of focused ion beam is more sensitive to the surface morphology and crystallinity. We have tried to use this secondary electron imaging of focused ion beam for observation of various extended defects in Si materials for photovoltaic and semiconductor devices. As for the texture of multicrystalline Si, some grains are imaged darker than the others. It suggests that the crystal orientation gives different channeling effect on the primary Ga-ion beam, resulting in the different secondary electron yield. The grain boundaries and lineage in multicrystalline Si are shown as bright lines and patterns in the image. Although it may reflect the surface morphologies, these contrasts may be attributed to the channeling contrast due to lattice displacement or distortion. The contrast mechanism of FIB imaging is discussed.
AB - We demonstrate the imaging of the extended defects in Si materials using a focused ion beam instrument. Since Ga-ion beam has small penetration depth and high channeling character compared with electron beam, the secondary electron signal of focused ion beam is more sensitive to the surface morphology and crystallinity. We have tried to use this secondary electron imaging of focused ion beam for observation of various extended defects in Si materials for photovoltaic and semiconductor devices. As for the texture of multicrystalline Si, some grains are imaged darker than the others. It suggests that the crystal orientation gives different channeling effect on the primary Ga-ion beam, resulting in the different secondary electron yield. The grain boundaries and lineage in multicrystalline Si are shown as bright lines and patterns in the image. Although it may reflect the surface morphologies, these contrasts may be attributed to the channeling contrast due to lattice displacement or distortion. The contrast mechanism of FIB imaging is discussed.
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U2 - 10.12693/APhysPolA.125.991
DO - 10.12693/APhysPolA.125.991
M3 - Article
AN - SCOPUS:84899724164
VL - 125
SP - 991
EP - 993
JO - Acta Physica Polonica A
JF - Acta Physica Polonica A
SN - 0587-4246
IS - 4
ER -