Foreseeing and active-suppression of anomalous discharge in plasma processing equipment by in-situ monitoring of plasma state using viewing port probe

M. Yasaka, M. Takeshita, M. Tama, T. Kitamura, N. Ito, Y. Itagaki, F. Uesugi, K. Okamura, A. Kodama, R. Miyagawa, K. Ishimatsu, M. Hagiwara, T. Asano

Research output: Contribution to journalConference article

Abstract

We demonstrate for the first time the foreseeing and active suppression of anomalous discharge in a plasma processing equipment. The foreseeing of anomalous discharge is realized by monitoring plasma state using a newly developed viewing-port probe. We have found that a foreseeing signal indicating a slight change in plasma potential appears prior to the occurrence of the anomalous discharge. The time interval between the foreseeing signal and the occurrence of the abnormal discharge is several tens millisecond, which allows to build-up a electric system to control the plasma state. The active suppression of anomalous discharge is demonstrated using a reactive ion-etching system by controlling the applied voltage of electrostatic chuck of wafer stage.

Original languageEnglish
Article numberPC207
Pages (from-to)371-374
Number of pages4
JournalIEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
Publication statusPublished - Dec 15 2005
EventIEEE International Symposium on Semiconductor Manufacturing, Conference Proceedings - San Jose, CA, United States
Duration: Sep 13 2005Sep 15 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Engineering(all)
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Yasaka, M., Takeshita, M., Tama, M., Kitamura, T., Ito, N., Itagaki, Y., Uesugi, F., Okamura, K., Kodama, A., Miyagawa, R., Ishimatsu, K., Hagiwara, M., & Asano, T. (2005). Foreseeing and active-suppression of anomalous discharge in plasma processing equipment by in-situ monitoring of plasma state using viewing port probe. IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, 371-374. [PC207].