Foreseeing and active-suppression of anomalous discharge in plasma processing equipment by in-situ monitoring of plasma state using viewing port probe

M. Yasaka, M. Takeshita, M. Tama, T. Kitamura, N. Ito, Y. Itagaki, F. Uesugi, K. Okamura, A. Kodama, R. Miyagawa, K. Ishimatsu, M. Hagiwara, Tanemasa Asano

Research output: Contribution to journalConference article

Abstract

We demonstrate for the first time the foreseeing and active suppression of anomalous discharge in a plasma processing equipment. The foreseeing of anomalous discharge is realized by monitoring plasma state using a newly developed viewing-port probe. We have found that a foreseeing signal indicating a slight change in plasma potential appears prior to the occurrence of the anomalous discharge. The time interval between the foreseeing signal and the occurrence of the abnormal discharge is several tens millisecond, which allows to build-up a electric system to control the plasma state. The active suppression of anomalous discharge is demonstrated using a reactive ion-etching system by controlling the applied voltage of electrostatic chuck of wafer stage.

Original languageEnglish
Article numberPC207
Pages (from-to)371-374
Number of pages4
JournalIEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
Publication statusPublished - Dec 15 2005
EventIEEE International Symposium on Semiconductor Manufacturing, Conference Proceedings - San Jose, CA, United States
Duration: Sep 13 2005Sep 15 2005

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Plasma applications
Plasmas
Monitoring
Chucks
Reactive ion etching
Electrostatics
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Foreseeing and active-suppression of anomalous discharge in plasma processing equipment by in-situ monitoring of plasma state using viewing port probe. / Yasaka, M.; Takeshita, M.; Tama, M.; Kitamura, T.; Ito, N.; Itagaki, Y.; Uesugi, F.; Okamura, K.; Kodama, A.; Miyagawa, R.; Ishimatsu, K.; Hagiwara, M.; Asano, Tanemasa.

In: IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, 15.12.2005, p. 371-374.

Research output: Contribution to journalConference article

Yasaka, M, Takeshita, M, Tama, M, Kitamura, T, Ito, N, Itagaki, Y, Uesugi, F, Okamura, K, Kodama, A, Miyagawa, R, Ishimatsu, K, Hagiwara, M & Asano, T 2005, 'Foreseeing and active-suppression of anomalous discharge in plasma processing equipment by in-situ monitoring of plasma state using viewing port probe', IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, pp. 371-374.
Yasaka, M. ; Takeshita, M. ; Tama, M. ; Kitamura, T. ; Ito, N. ; Itagaki, Y. ; Uesugi, F. ; Okamura, K. ; Kodama, A. ; Miyagawa, R. ; Ishimatsu, K. ; Hagiwara, M. ; Asano, Tanemasa. / Foreseeing and active-suppression of anomalous discharge in plasma processing equipment by in-situ monitoring of plasma state using viewing port probe. In: IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings. 2005 ; pp. 371-374.
@article{3deb5316e432458d916f3e516ba68464,
title = "Foreseeing and active-suppression of anomalous discharge in plasma processing equipment by in-situ monitoring of plasma state using viewing port probe",
abstract = "We demonstrate for the first time the foreseeing and active suppression of anomalous discharge in a plasma processing equipment. The foreseeing of anomalous discharge is realized by monitoring plasma state using a newly developed viewing-port probe. We have found that a foreseeing signal indicating a slight change in plasma potential appears prior to the occurrence of the anomalous discharge. The time interval between the foreseeing signal and the occurrence of the abnormal discharge is several tens millisecond, which allows to build-up a electric system to control the plasma state. The active suppression of anomalous discharge is demonstrated using a reactive ion-etching system by controlling the applied voltage of electrostatic chuck of wafer stage.",
author = "M. Yasaka and M. Takeshita and M. Tama and T. Kitamura and N. Ito and Y. Itagaki and F. Uesugi and K. Okamura and A. Kodama and R. Miyagawa and K. Ishimatsu and M. Hagiwara and Tanemasa Asano",
year = "2005",
month = "12",
day = "15",
language = "English",
pages = "371--374",
journal = "IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings",
issn = "1523-553X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Foreseeing and active-suppression of anomalous discharge in plasma processing equipment by in-situ monitoring of plasma state using viewing port probe

AU - Yasaka, M.

AU - Takeshita, M.

AU - Tama, M.

AU - Kitamura, T.

AU - Ito, N.

AU - Itagaki, Y.

AU - Uesugi, F.

AU - Okamura, K.

AU - Kodama, A.

AU - Miyagawa, R.

AU - Ishimatsu, K.

AU - Hagiwara, M.

AU - Asano, Tanemasa

PY - 2005/12/15

Y1 - 2005/12/15

N2 - We demonstrate for the first time the foreseeing and active suppression of anomalous discharge in a plasma processing equipment. The foreseeing of anomalous discharge is realized by monitoring plasma state using a newly developed viewing-port probe. We have found that a foreseeing signal indicating a slight change in plasma potential appears prior to the occurrence of the anomalous discharge. The time interval between the foreseeing signal and the occurrence of the abnormal discharge is several tens millisecond, which allows to build-up a electric system to control the plasma state. The active suppression of anomalous discharge is demonstrated using a reactive ion-etching system by controlling the applied voltage of electrostatic chuck of wafer stage.

AB - We demonstrate for the first time the foreseeing and active suppression of anomalous discharge in a plasma processing equipment. The foreseeing of anomalous discharge is realized by monitoring plasma state using a newly developed viewing-port probe. We have found that a foreseeing signal indicating a slight change in plasma potential appears prior to the occurrence of the anomalous discharge. The time interval between the foreseeing signal and the occurrence of the abnormal discharge is several tens millisecond, which allows to build-up a electric system to control the plasma state. The active suppression of anomalous discharge is demonstrated using a reactive ion-etching system by controlling the applied voltage of electrostatic chuck of wafer stage.

UR - http://www.scopus.com/inward/record.url?scp=28744446014&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28744446014&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:28744446014

SP - 371

EP - 374

JO - IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

JF - IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

SN - 1523-553X

M1 - PC207

ER -