@inproceedings{2ea7ae1fcef7483d945bfb991e900515,
title = "Formalion of SiGe quasi-single crystal grain on insulator by indentation-induced solid-phase crystallization",
abstract = "Formation of SiGe quasi-single crystal grains on insulator by the indentation-induced solid-phase crystallization has been investigated. The incubation time for nucleation was significantly reduced by the indentation. As a result, large (∼2 (.irn) crystal grains were realized at controlled positions for samples with all Ge fractions. This method is expected to be useful for realization of the 3D-ULSIs and system-in-displays.",
author = "T. Sadoh and K. Toko and M. Miyao",
year = "2009",
doi = "10.1149/1.2986773",
language = "English",
isbn = "9781566776561",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "10",
pages = "219--222",
booktitle = "ECS Transactions - SiGe, Ge, and Related Compounds 3",
edition = "10",
note = "3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",
}