Formalion of SiGe quasi-single crystal grain on insulator by indentation-induced solid-phase crystallization

T. Sadoh, K. Toko, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Formation of SiGe quasi-single crystal grains on insulator by the indentation-induced solid-phase crystallization has been investigated. The incubation time for nucleation was significantly reduced by the indentation. As a result, large (∼2 (.irn) crystal grains were realized at controlled positions for samples with all Ge fractions. This method is expected to be useful for realization of the 3D-ULSIs and system-in-displays.

Original languageEnglish
Title of host publicationECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publicationMaterials, Processing, and Devices
Pages219-222
Number of pages4
Edition10
DOIs
Publication statusPublished - Dec 1 2008
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: Oct 12 2008Oct 17 2008

Publication series

NameECS Transactions
Number10
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/12/0810/17/08

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Sadoh, T., Toko, K., & Miyao, M. (2008). Formalion of SiGe quasi-single crystal grain on insulator by indentation-induced solid-phase crystallization. In ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices (10 ed., pp. 219-222). (ECS Transactions; Vol. 16, No. 10). https://doi.org/10.1149/1.2986773