Abstract
We have investigated the formation and the current-voltage characteristics of SiC/Si-dot/SiC resonant tunneling diodes on Si(100). The high-resolution transmission electron microscopy observation showed that SiC/Si-dot/SiC structures were epitaxially grown on Si(100) at the substrate temperatures of 800°C for SiC and 700°C for Si-dot growth. The current-voltage characteristics were measured by an atomic force microscope using a gold-coated conductive cantilever. Negative resistance regions were observed in the current-voltage curves from the dots. The numerical calculations showed that the negative resistance was due to the resonant tunneling of the electron wave through the double barrier structure.
| Original language | English |
|---|---|
| Pages (from-to) | 157-164 |
| Number of pages | 8 |
| Journal | Solid State Phenomena |
| Volume | 78-79 |
| DOIs | |
| Publication status | Published - 2001 |
| Event | 6th International Workshop on Beam Injection assesment of Microstructures in Semiconductors (BIAMS 2000) - Fukuoka, Japan Duration: Nov 12 2000 → Nov 16 2000 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics