TY - JOUR
T1 - Formation and Physical Properties of h-BN Atomic Layers
T2 - A First-Principles Density-Functional Study
AU - Fujimoto, Yoshitaka
N1 - Funding Information:
This work was partly supported by MEXT Elements Strategy Initiative to Form Core Research Center through Tokodai Institute for Element Strategy and JSPS KAKENHI (Grants nos. JP17K05053 and JP26390062). Computations were partly done at Institute for Solid State Physics, the University of Tokyo, and at Cybermedia Center of Osaka University.
Publisher Copyright:
© 2017 Yoshitaka Fujimoto.
PY - 2017
Y1 - 2017
N2 - Hexagonal boron nitride (h-BN) atomic layers have attracted much attention as a potential device material for future nanoelectronics, optoelectronics, and spintronics applications. This review aims to describe the recent works of the first-principles density-functional study on h-BN layers. We show physical properties induced by introduction of various kinds of defects in h-BN layers. We further discuss the relationship among the defect size, the strain, and the magnetic as well as the electronic properties.
AB - Hexagonal boron nitride (h-BN) atomic layers have attracted much attention as a potential device material for future nanoelectronics, optoelectronics, and spintronics applications. This review aims to describe the recent works of the first-principles density-functional study on h-BN layers. We show physical properties induced by introduction of various kinds of defects in h-BN layers. We further discuss the relationship among the defect size, the strain, and the magnetic as well as the electronic properties.
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U2 - 10.1155/2017/2676432
DO - 10.1155/2017/2676432
M3 - Review article
AN - SCOPUS:85029227535
VL - 2017
JO - Advances in Materials Science and Engineering
JF - Advances in Materials Science and Engineering
SN - 1687-8434
M1 - 2676432
ER -