Formation and Physical Properties of h-BN Atomic Layers: A First-Principles Density-Functional Study

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Abstract

Hexagonal boron nitride (h-BN) atomic layers have attracted much attention as a potential device material for future nanoelectronics, optoelectronics, and spintronics applications. This review aims to describe the recent works of the first-principles density-functional study on h-BN layers. We show physical properties induced by introduction of various kinds of defects in h-BN layers. We further discuss the relationship among the defect size, the strain, and the magnetic as well as the electronic properties.

Original languageEnglish
Article number2676432
JournalAdvances in Materials Science and Engineering
Volume2017
DOIs
Publication statusPublished - 2017
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

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