Formation and structural characterization of nanocrystalline Si/SiC multilayers grown by hot filament assisted chemical vapor deposition using CH3SiH3 gas jets

Yoshifumi Ikoma, Ryousuke Okuyama, Makoto Arita, Teruaki Motooka

Research output: Contribution to journalArticle

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Abstract

We report on the formation and the structural characterization of nanocrystalline Si/SiC (nc-Si/SiC) multilayers on Si(100) by hot filament assisted chemical vapor deposition using CH3SiH3 gas pulse jets. Si rich amorphous SiC (a-Si1 - xCx, x ~ 0.33) was initially grown at the substrate temperature (Ts) of 600 °C with heating a hot filament at ~ 2000 °C. The following crystalline SiC layers were grown at Ts = 850 °C without utilizing a hot filament. When the a-Si1 - xCx layer was ultrathin (< 2 nm) on Si(100), this a-Si1 - xCx layer was transformed to a single epitaxial SiC layer during the subsequent SiC growth process. The Si{111} faceted pits were formed at the SiC/Si(100) interface due to Si diffusion processes from the substrate. When the thickness of the initial a-Si1 - xCx layer was increased to ~ 5 nm, a double layer structure was formed in which this amorphous layer was changed to nc-Si and nc-SiC was grown on the top resulting in the considerable reduction of the {111} faceted pits. It was found that nc-SiC was formed by consuming the Si atoms uniformly diffused from the a-Si1 - xCx layer below and that Si nanocrystals were generated in the a-Si1 - xCx layers due to the annealing effect during further multilayer growths.

Original languageEnglish
Pages (from-to)3759-3762
Number of pages4
JournalThin Solid Films
Volume518
Issue number14
DOIs
Publication statusPublished - May 3 2010

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gas jets
Chemical vapor deposition
filaments
Multilayers
Gases
vapor deposition
Epitaxial layers
Substrates
Nanocrystals
Annealing
Crystalline materials
Heating
Atoms
Temperature
nanocrystals
annealing
heating

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Formation and structural characterization of nanocrystalline Si/SiC multilayers grown by hot filament assisted chemical vapor deposition using CH3SiH3 gas jets. / Ikoma, Yoshifumi; Okuyama, Ryousuke; Arita, Makoto; Motooka, Teruaki.

In: Thin Solid Films, Vol. 518, No. 14, 03.05.2010, p. 3759-3762.

Research output: Contribution to journalArticle

@article{b919910977e54ae38230713f882a17a0,
title = "Formation and structural characterization of nanocrystalline Si/SiC multilayers grown by hot filament assisted chemical vapor deposition using CH3SiH3 gas jets",
abstract = "We report on the formation and the structural characterization of nanocrystalline Si/SiC (nc-Si/SiC) multilayers on Si(100) by hot filament assisted chemical vapor deposition using CH3SiH3 gas pulse jets. Si rich amorphous SiC (a-Si1 - xCx, x ~ 0.33) was initially grown at the substrate temperature (Ts) of 600 °C with heating a hot filament at ~ 2000 °C. The following crystalline SiC layers were grown at Ts = 850 °C without utilizing a hot filament. When the a-Si1 - xCx layer was ultrathin (< 2 nm) on Si(100), this a-Si1 - xCx layer was transformed to a single epitaxial SiC layer during the subsequent SiC growth process. The Si{111} faceted pits were formed at the SiC/Si(100) interface due to Si diffusion processes from the substrate. When the thickness of the initial a-Si1 - xCx layer was increased to ~ 5 nm, a double layer structure was formed in which this amorphous layer was changed to nc-Si and nc-SiC was grown on the top resulting in the considerable reduction of the {111} faceted pits. It was found that nc-SiC was formed by consuming the Si atoms uniformly diffused from the a-Si1 - xCx layer below and that Si nanocrystals were generated in the a-Si1 - xCx layers due to the annealing effect during further multilayer growths.",
author = "Yoshifumi Ikoma and Ryousuke Okuyama and Makoto Arita and Teruaki Motooka",
year = "2010",
month = "5",
day = "3",
doi = "10.1016/j.tsf.2009.10.127",
language = "English",
volume = "518",
pages = "3759--3762",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "14",

}

TY - JOUR

T1 - Formation and structural characterization of nanocrystalline Si/SiC multilayers grown by hot filament assisted chemical vapor deposition using CH3SiH3 gas jets

AU - Ikoma, Yoshifumi

AU - Okuyama, Ryousuke

AU - Arita, Makoto

AU - Motooka, Teruaki

PY - 2010/5/3

Y1 - 2010/5/3

N2 - We report on the formation and the structural characterization of nanocrystalline Si/SiC (nc-Si/SiC) multilayers on Si(100) by hot filament assisted chemical vapor deposition using CH3SiH3 gas pulse jets. Si rich amorphous SiC (a-Si1 - xCx, x ~ 0.33) was initially grown at the substrate temperature (Ts) of 600 °C with heating a hot filament at ~ 2000 °C. The following crystalline SiC layers were grown at Ts = 850 °C without utilizing a hot filament. When the a-Si1 - xCx layer was ultrathin (< 2 nm) on Si(100), this a-Si1 - xCx layer was transformed to a single epitaxial SiC layer during the subsequent SiC growth process. The Si{111} faceted pits were formed at the SiC/Si(100) interface due to Si diffusion processes from the substrate. When the thickness of the initial a-Si1 - xCx layer was increased to ~ 5 nm, a double layer structure was formed in which this amorphous layer was changed to nc-Si and nc-SiC was grown on the top resulting in the considerable reduction of the {111} faceted pits. It was found that nc-SiC was formed by consuming the Si atoms uniformly diffused from the a-Si1 - xCx layer below and that Si nanocrystals were generated in the a-Si1 - xCx layers due to the annealing effect during further multilayer growths.

AB - We report on the formation and the structural characterization of nanocrystalline Si/SiC (nc-Si/SiC) multilayers on Si(100) by hot filament assisted chemical vapor deposition using CH3SiH3 gas pulse jets. Si rich amorphous SiC (a-Si1 - xCx, x ~ 0.33) was initially grown at the substrate temperature (Ts) of 600 °C with heating a hot filament at ~ 2000 °C. The following crystalline SiC layers were grown at Ts = 850 °C without utilizing a hot filament. When the a-Si1 - xCx layer was ultrathin (< 2 nm) on Si(100), this a-Si1 - xCx layer was transformed to a single epitaxial SiC layer during the subsequent SiC growth process. The Si{111} faceted pits were formed at the SiC/Si(100) interface due to Si diffusion processes from the substrate. When the thickness of the initial a-Si1 - xCx layer was increased to ~ 5 nm, a double layer structure was formed in which this amorphous layer was changed to nc-Si and nc-SiC was grown on the top resulting in the considerable reduction of the {111} faceted pits. It was found that nc-SiC was formed by consuming the Si atoms uniformly diffused from the a-Si1 - xCx layer below and that Si nanocrystals were generated in the a-Si1 - xCx layers due to the annealing effect during further multilayer growths.

UR - http://www.scopus.com/inward/record.url?scp=77950543814&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950543814&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.10.127

DO - 10.1016/j.tsf.2009.10.127

M3 - Article

VL - 518

SP - 3759

EP - 3762

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 14

ER -