Formation mechanism of Al-segregated region in InAlAs/(1 1 0)InP

Yoshihiro Kangawa, K. Wakizono, N. Kuwano, K. Oki, T. Ito

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We studied the formation mechanism of Al-segregated regions in InAlAs/(1 1 0) InP by transmission electron microscopy (TEM). It is found that the Al-segregated regions observed as dark bands in the TEM image thread upward at certain intervals. The intervals of the regions agree well with the spaces estimated from the distances between one-monolayer steps (1-MLSs) on the substrate surface. This suggests that the 1-MLSs play an important role for nucleation of the Al-segregated region. Based on this finding, we also propose a model for the nucleation mechanism.

Original languageEnglish
Pages (from-to)164-168
Number of pages5
JournalJournal of Crystal Growth
Volume229
Issue number1
DOIs
Publication statusPublished - Jul 2 2001
Externally publishedYes

Fingerprint

Nucleation
nucleation
Transmission electron microscopy
intervals
transmission electron microscopy
threads
Monolayers
Substrates

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Formation mechanism of Al-segregated region in InAlAs/(1 1 0)InP. / Kangawa, Yoshihiro; Wakizono, K.; Kuwano, N.; Oki, K.; Ito, T.

In: Journal of Crystal Growth, Vol. 229, No. 1, 02.07.2001, p. 164-168.

Research output: Contribution to journalArticle

Kangawa, Yoshihiro ; Wakizono, K. ; Kuwano, N. ; Oki, K. ; Ito, T. / Formation mechanism of Al-segregated region in InAlAs/(1 1 0)InP. In: Journal of Crystal Growth. 2001 ; Vol. 229, No. 1. pp. 164-168.
@article{8cf7f1f567eb4c8e83f9bfb73a1597f8,
title = "Formation mechanism of Al-segregated region in InAlAs/(1 1 0)InP",
abstract = "We studied the formation mechanism of Al-segregated regions in InAlAs/(1 1 0) InP by transmission electron microscopy (TEM). It is found that the Al-segregated regions observed as dark bands in the TEM image thread upward at certain intervals. The intervals of the regions agree well with the spaces estimated from the distances between one-monolayer steps (1-MLSs) on the substrate surface. This suggests that the 1-MLSs play an important role for nucleation of the Al-segregated region. Based on this finding, we also propose a model for the nucleation mechanism.",
author = "Yoshihiro Kangawa and K. Wakizono and N. Kuwano and K. Oki and T. Ito",
year = "2001",
month = "7",
day = "2",
doi = "10.1016/S0022-0248(01)01113-7",
language = "English",
volume = "229",
pages = "164--168",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Formation mechanism of Al-segregated region in InAlAs/(1 1 0)InP

AU - Kangawa, Yoshihiro

AU - Wakizono, K.

AU - Kuwano, N.

AU - Oki, K.

AU - Ito, T.

PY - 2001/7/2

Y1 - 2001/7/2

N2 - We studied the formation mechanism of Al-segregated regions in InAlAs/(1 1 0) InP by transmission electron microscopy (TEM). It is found that the Al-segregated regions observed as dark bands in the TEM image thread upward at certain intervals. The intervals of the regions agree well with the spaces estimated from the distances between one-monolayer steps (1-MLSs) on the substrate surface. This suggests that the 1-MLSs play an important role for nucleation of the Al-segregated region. Based on this finding, we also propose a model for the nucleation mechanism.

AB - We studied the formation mechanism of Al-segregated regions in InAlAs/(1 1 0) InP by transmission electron microscopy (TEM). It is found that the Al-segregated regions observed as dark bands in the TEM image thread upward at certain intervals. The intervals of the regions agree well with the spaces estimated from the distances between one-monolayer steps (1-MLSs) on the substrate surface. This suggests that the 1-MLSs play an important role for nucleation of the Al-segregated region. Based on this finding, we also propose a model for the nucleation mechanism.

UR - http://www.scopus.com/inward/record.url?scp=0035398272&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035398272&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)01113-7

DO - 10.1016/S0022-0248(01)01113-7

M3 - Article

AN - SCOPUS:0035398272

VL - 229

SP - 164

EP - 168

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -